Document
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9013PLT1G
Series
S-L9013PLT1G
DEVICE MARKING AND ORDERING INFORMATION
Series
Device L9013PLT1G S-L9013PLT1G L9013PLT3G S-L9013PLT3G L9013QLT1G S-L9013QLT1G L9013QLT3G S-L9013QLT3G L9013RLT1G S-L9013RLT1G L9013RLT3G S-L9013RLT3G L9013SLT1G S-L9013SLT1G L9013SLT3G S-L9013SLT3G
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Marking 13P
13P 13Q
13Q 13R
13R 13S
13S
Symbol VCEO VCBO VEBO
Shipping 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel
Value 20 40 5
Unit V V V
3
1 2
SOT-23 (TO-236AB)
1 BASE
3 COLLECTOR
2 EMITTER
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
500 mAdc
Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θ JA PD
R θJA Tj ,Tstg
Max
225 1.8 556
300 2.4 417 -55 to +150
Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µA) Collector-Base Breakdown Voltage (IC=100µA) Collector Cutoff Current (VCB=35V)
V(BR)CEO V(BR)EBO V(BR)CBO
ICBO
20 5 40
-
-
Emitter Cutoff Current (VEB=4V)
IEBO
Max
150 150
Unit
V V V nA nA
Rev.O 1/2
ON CHARACTERISTICS
DC Current Gain (IC=50mA, VCE=1V) Collector-Emitter Saturation Voltage (IC=500mA,IB=50mA)
LESHAN RADIO COMPANY, LTD.
L9013PLT1G Series S-L9013PLT1G Series
Hfe VCE(S)
100 -
- 600 - 0.6
V
NOTE:
*
HFE
P
100~200
Q
150~300
R
200~400
S
300~600
SOT-23 (TO-236AB)
A L
3
BS
12
VG
C D H KJ
0.037 0.95
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS 2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
SOLDER PLATING.
INCHES
DIM MIN MAX A 0.1102 0.1197 B 0.0472 0.0551 C 0.0350 0.0440 D 0.0150 0.0200 G 0.0701 0.0807 H 0.0005 0.0040 J 0.0034 0.0070 K 0.0180 0.0236 L 0.0350 0.0401 S 0.0830 0.0984 V 0.0177 0.0236
MILLIMETERS
MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60
PIN 1. BASE 2. EMITTER 3. COLLECTOR
0.037 0.95
0.035 0.9
0.079 2.0
0.031 0.8
inches mm
Rev.O 2/2
.