Document
LESHAN RADIO COMPANY, LTD.
Medium Power Transistor NPN silicon
FEATURE
ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Free package is available
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC2411KPLT1
CP
3000/Tape&Reel
L2SC2411KPLT1G (Pb-Free)
CP
3000/Tape&Reel
L2SC2411KQLT1
CQ
3000/Tape&Reel
L2SC2411KQLT1G (Pb-Free)
CQ
3000/Tape&Reel
L2SC2411KRLT1
CR
3000/Tape&Reel
L2SC2411KRLT1G (Pb-Free)
CR
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C) Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 40 32 5 0.5 0.2 150
-55~+150
*PC must not be exceeded.
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol
Min.
Typ
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltgae Collector cutoff current Emitter cutoff current DC current transfer ratio Collcetor-emitter saturation voltage Transition frequency Output capacitance
hFE values are classified as follows:
Item P Q R
hFE
82~180 120~270 180~390
BVCBO BVCEO BVEBO
ICBO IEBO hFE VCE(sat) fT Cob
40 32 5 82 -
250 6.0
Unit V V V A* W °C °C
Max.
1 1 390 0.4 -
Unit
V V V µA µA V MHz pF
L2SC2411K*LT1
3 1
2
SOT– 23 (TO–236AB)
1 BASE
3 COLLECTOR
2 EMITTER
Conditions
IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V VCE=3V IC/IB=500mA/50mA VCE=5V,IE=-20mA,f=100MHz VCB=10V,IE=0A,f=1MHz
L2SC2411K*LT1-1/4
LESHAN RADIO COMPANY, LTD.
Electrical characteristic curves(TA = 25°C)
L2SC2411K*LT1
1000
500 VCE=6V
COLLECTOR CURRENT : I (mA)
C
200 100
www.DataSheet4U.com
50
20 10
5
Ta=100OC
80OC 25OC
25OC 55 OC
2 1 0.5
0.2 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.1 Grounded emitter propagation characteristics
COLLECTOR CURRENT : I (mA) C
100 Ta = 25OC
0.50mA
50
0.45mA 0.40mA 0.35mA 0.30mA 0.25mA 0.20mA 0.15mA 0.10mA
0.05mA
0 IB = 0A
01
23
45
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output characteristics(I)
COLLECTOR CURRENT : I (mA)
C
500 Ta = 25OC
400
2mA 1.8mA
1.6mA
1.4mA
300 1.2mA 1.0mA
0.8mA 200 0.6mA
0.4mA 100
0.2mA
0 IB= 0A 0 1 2345
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.3 Grounded emitter output characteristics(II)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
1 Ta = 25OC lC /l B = 10
0.5
0.2 0.1 0.05
0.02 0.5 1
2
5 1 0 2 0 5 0 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.4 Collector-emitter saturation voltage vs. collector current
L2SC2411K*LT1-2/4
LESHAN RADIO COMPANY, LTD.
Electrical characteristic curves(TA = 25°C)
L2SC2411K*LT1
DC CURRENT GAIN : hFE TRANSITION FREQUENCY : fT(MHz)
1000
500
www.DataSheet4U.com Ta
= 100O C
200 75O C
50O C 100 25O C
0O C 50 25O C
50O C
VCE = 3V
20
10 0.1 0.2 0.5 1 2
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC(mA)
Fig.5 DC current gain vs. collector current
500 Ta = 25 OC V C.