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L2SC2411KRLT1 Dataheets PDF



Part Number L2SC2411KRLT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Medium Power Transistor NPN silicon
Datasheet L2SC2411KRLT1 DatasheetL2SC2411KRLT1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Free package is available DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SC2411KPLT1 CP 3000/Tape&Reel L2SC2411KPLT1G (Pb-Free) CP 3000/Tape&Reel L2SC2411KQLT1 CQ 3000/Tape&Reel L2SC2411KQLT1G (Pb-Free) CQ 3000/Tape&Reel L2SC2411KRLT1 CR 3000/Tape&Reel L2SC2411KRLT1G (Pb-Free) CR 3000/Tape&Reel MAXIMUM RATINGS.

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Free package is available DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SC2411KPLT1 CP 3000/Tape&Reel L2SC2411KPLT1G (Pb-Free) CP 3000/Tape&Reel L2SC2411KQLT1 CQ 3000/Tape&Reel L2SC2411KQLT1G (Pb-Free) CQ 3000/Tape&Reel L2SC2411KRLT1 CR 3000/Tape&Reel L2SC2411KRLT1G (Pb-Free) CR 3000/Tape&Reel MAXIMUM RATINGS (TA = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 32 5 0.5 0.2 150 -55~+150 *PC must not be exceeded. ELECTRICAL CHARACTERISTICS(TA= 25°C) Parameter Symbol Min. Typ Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltgae Collector cutoff current Emitter cutoff current DC current transfer ratio Collcetor-emitter saturation voltage Transition frequency Output capacitance hFE values are classified as follows: Item P Q R hFE 82~180 120~270 180~390 BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob 40 32 5 82 - 250 6.0 Unit V V V A* W °C °C Max. 1 1 390 0.4 - Unit V V V µA µA V MHz pF L2SC2411K*LT1 3 1 2 SOT– 23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER Conditions IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V VCE=3V IC/IB=500mA/50mA VCE=5V,IE=-20mA,f=100MHz VCB=10V,IE=0A,f=1MHz L2SC2411K*LT1-1/4 LESHAN RADIO COMPANY, LTD. Electrical characteristic curves(TA = 25°C) L2SC2411K*LT1 1000 500 VCE=6V COLLECTOR CURRENT : I (mA) C 200 100 www.DataSheet4U.com 50 20 10 5 Ta=100OC 80OC 25OC 25OC 55 OC 2 1 0.5 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 BASE TO EMITTER VOLTAGE : VBE(V) Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : I (mA) C 100 Ta = 25OC 0.50mA 50 0.45mA 0.40mA 0.35mA 0.30mA 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA 0 IB = 0A 01 23 45 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.2 Grounded emitter output characteristics(I) COLLECTOR CURRENT : I (mA) C 500 Ta = 25OC 400 2mA 1.8mA 1.6mA 1.4mA 300 1.2mA 1.0mA 0.8mA 200 0.6mA 0.4mA 100 0.2mA 0 IB= 0A 0 1 2345 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.3 Grounded emitter output characteristics(II) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 1 Ta = 25OC lC /l B = 10 0.5 0.2 0.1 0.05 0.02 0.5 1 2 5 1 0 2 0 5 0 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.4 Collector-emitter saturation voltage vs. collector current L2SC2411K*LT1-2/4 LESHAN RADIO COMPANY, LTD. Electrical characteristic curves(TA = 25°C) L2SC2411K*LT1 DC CURRENT GAIN : hFE TRANSITION FREQUENCY : fT(MHz) 1000 500 www.DataSheet4U.com Ta = 100O C 200 75O C 50O C 100 25O C 0O C 50 25O C 50O C VCE = 3V 20 10 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) Fig.5 DC current gain vs. collector current 500 Ta = 25 OC V C.


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