L2SC2411KQLT3G

LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K ƽWe declare that the material of product are Halogen Free and compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101 qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device L2SC2411KQLT1G S-L2SC2411KQLT1G L2SC2411KQLT3G S-L2SC2411KQLT3G L2SC2411KRLT1G S-L2SC2411KRLT1G L2SC2411KRLT3G S-L2SC2411KRLT3G Marking CQ CQ CR CR Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel L2SC2411KQLT1G Series S-L2SC2411KQLT1G Series 3 1 2 SOT– 23 (TO–236AB) 3 COLLECTOR MAXIMUM RATINGS (TA = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 32 5 0.5 0.2 150 -55~+150 *PC must not be exceeded. ELECTRICAL CHARACTERISTICS(TA= 25°C) Parameter Symbol Min. Typ Collector-base breakdown voltage BVCBO 40 - Collector-emitter breakdown voltage BVCEO 32 - Emitter-base breakdown voltgae BVEBO 5 - Collector cutoff current ICBO - - Emitter cutoff current IEBO - - DC current transfer ratio hFE 120 - Collcetor-emitter saturation voltage VCE(sat) - - Transition frequency fT - 250 Output capacitance Cob - 6.0 hFE values are classified as follows: Item Q R ...