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L2SC2412KQLT3G

Leshan Radio Company

General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance...


Leshan Radio Company

L2SC2412KQLT3G

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Description
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device L2SC2412KQLT1G S-L2SC2412KQLT1G L2SC2412KQLT3G S-L2SC2412KQLT3G L2SC2412KRLT1G S-L2SC2412KRLT1G L2SC2412KRLT3G S-L2SC2412KRLT3G L2SC2412KSLT1G S-L2SC2412KSLT1G L2SC2412KSLT3G S-L2SC2412KSLT3G MAXIMUM RATINGS Marking BQ BQ BR BR G1F G1F Shipping 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel L2SC2412KQLT1G Series S-L2SC2412KQLT1G Series 3 1 2 SOT– 23 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 50 V Collector–Base Voltage V CBO 60 V Emitter–Base Voltage V EBO 7.0 V Collector Current — Continuous Collector power dissipation Junction temperature IC PC Tj 150 mAdc 0.2 W 150 °C Storage temperature T stg -55 ~+150 °C DEVICE MARKING L2SC2412KQLT1G =BQ L2SC2412KRLT1G =BR L2SC2412KSLT1G =G1F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1...




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