DatasheetsPDF.com

L8050QLT1G Dataheets PDF



Part Number L8050QLT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet L8050QLT1G DatasheetL8050QLT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar type. ƽPNP complement: L8550 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8050PLT1 80P 3000/Tape&Reel L8050PLT1G 80P (Pb-Free) 3000/Tape&Reel L8050QLT1 1YC 3000/Tape&Reel L8050QLT1G 1YC (Pb-Free) 3000/Tape&Reel MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage .

  L8050QLT1G   L8050QLT1G


Document
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar type. ƽPNP complement: L8550 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8050PLT1 80P 3000/Tape&Reel L8050PLT1G 80P (Pb-Free) 3000/Tape&Reel L8050QLT1 1YC 3000/Tape&Reel L8050QLT1G 1YC (Pb-Free) 3000/Tape&Reel MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun Symbol VCEO VCBO VEBO IC Max 25 40 5 800 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C Symbol PD R θJ A PD Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance,Junction to Ambient Junction and Storage Temperature R θJ A Tj,T Stg 417 -55 to +150 °C/W °C L8050*LT1 3 1 2 SOT–23 COLLECTOR 3 1 BASE 2 EMITTER L8050*LT1–1/3 LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Typ Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µΑ) Collector-Base Breakdown Voltage (IC=100µΑ) Collector Cutoff Current (VCB=35V) Emitter Cutoff Current (VEB=4V) V(BR)CEO V(BR)EBO V(BR)CBO ICBO IEBO 25 5 40 – – – – – – – ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min Typ ON CHARACTERISTICS DC Current Gain IC=100mA,VCE=1V Collector-Emitter Saturation Voltage hFE 150 - (IC=800mA) VCE(S) - - L8050*LT1 Max Unit –V –V –V 150 nA 150 nA Max Unit 600 0.5 V NOTE : *P hFE 100~200 QR 150~300 200~400 S 300~600 L8050*LT1–2/3 LESHAN RADIO COMPANY, LTD. L8050*LT1 SOT-23 A L 3 BS 12 VG C D H KJ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.035 0.9 0.079 2.0 0.031 0.8 inches mm L8050*LT1–3/3 .


L8050QLT1 L8050QLT1G L2SA1037AKQLT1G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)