2SC2712 | WEJ
NPN Transistor
NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER
High Current Gain Bandwidth Product fT=600MHz
2SC2715
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Collector Dissipation Ta=25oC* Junction Tempe.
- 2SC2712 | INCHANGE
- NPN Transistor
- isc Silicon NPN Power Transistor
DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·H.
- isc Silicon NPN Power Transistor
DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
.
- 2SC2712 | GME
- Silicon NPN Transistor
- Production specification
Silicon Epitaxial Planar Transistor
FEATURES
Low noise：NF=1dB (Typ.),10.
- Production specification
Silicon Epitaxial Planar Transistor
FEATURES
Low noise：NF=1dB (Typ.),10 dB(Max) Complementary to 2SA1162
Pb
Lead-free
High voltage and high current
Excellent hFE linearity
2SC2712
APPLICATIONS
Audio frequency general purpose amplifier applications
SOT-23
ORDERING INFORMATION
Type No.
Marking
2SC2712
LO/LY/LG/LL
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Paramet.
- 2SC2712 | HOTTECH
- NPN Transistor
- Plastic-Encapsulate Transistors
FEATURES
Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA116.
- Plastic-Encapsulate Transistors
FEATURES
Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162
2SC2712 (NPN)
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
60
VCEO
50
VEBO
5
IC 150 PC 200
TJ 150
Tstg -55 to +150
Unit
V V V mA mW
1.
- 2SC2712 | BLUE ROCKET ELECTRONICS
- Silicon NPN transistor
- 2SC2712
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-23 NPN 。Silicon NPN transistor in a SOT-2.
- 2SC2712
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.
/ Features
，，，，。 High voltage, high current, high hFE, low noise, excellent hFE linearity.
/ Applications
。 Audio frequency general purpose amplifier applications.
/ Equivalent Circuit
/ Pinning
3
2 1
PIN1：Emitter
PIN 2：Base PIN 3：Collector
/ hFE Classifications & Marking
hFE Classifications Symbol hFE Range
O 7.
- 2SC2712 | WEJ
- NPN Transistor
- NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER
High Current Gai.
- NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER
High Current Gain Bandwidth Product fT=600MHz
2SC2715
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Collector Dissipation Ta=25oC* Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO .
