HGT1S20N36G3VL

March 2004 HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs Features Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = 175oC Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING PART NUMBER PACKAGE BRAND HGTP20N36G3VL TO-220AB 20N36GVL HGT1S20N36G3VL TO-262AA 20N36GVL HGT1S20N36G3VLS TO-263AB 20N36GVL Packages COLLECTOR (FLANGE) JEDEC TO-220AB EC G JEDEC TO-263AB G E JEDEC TO-262AA ECG COLLECTOR (FLANGE) COLLECTOR (FLANGE) Symbol COLLECTOR The development type number for this device is TA49296. GATE R1 R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . ....