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STB24N60M2 Dataheets PDF



Part Number STB24N60M2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STB24N60M2 DatasheetSTB24N60M2 Datasheet (PDF)

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg 22 Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB TAB 123 I2PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes VDS @ TJmax RDS(on) max ID STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 650 V 0.19 Ω 18 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Lo.

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STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg 22 Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB TAB 123 I2PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes VDS @ TJmax RDS(on) max ID STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 650 V 0.19 Ω 18 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 Table 1. Device summary Marking Package 24N60M2 2 D PAK 2 I PAK TO-220 TO-247 Packaging Tape and reel Tube February 2014 This is information on a product in full production. DocID023964 Rev 5 1/21 www.st.com 21 Contents Contents STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 DocID023964 Rev 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 1 Electrical ratings Electrical ratings Symbol Table 2. Absolute maximum ratings Parameter Value VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C (1) IDM Drain current (pulsed) PTOT Total dissipation at TC = 25 °C (2) dv/dt Peak diode recovery voltage slope (3) dv/dt MOSFET dv/dt ruggedness Tstg Storage temperature Tj Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 18 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V. 3. VDS ≤ 480 V ± 25 18 12 72 150 15 50 - 55 to 150 Unit V A A A W V/ns V/ns °C Symbol Table 3. Thermal data Parameter Value Unit D2PAK I2PAK TO-220 TO-247 Rthj-case Thermal resistance junction-case max (1) Rthj-pcb Thermal resistance junction-pcb max Rthj-amb Thermal resistance junction-ambient max 1. When mounted on 1 inch² FR-4, 2 Oz copper board 30 0.83 62.5 °C/W °C/W 50 °C/W Symbol Table 4. Avalanche characteristics Parameter Value Avalanche current, repetitive or not IAR repetitive (pulse width limited by Tjmax ) Single pulse avalanche energy (starting EAS Tj=25°C, ID= IAR; VDD=50) 3.5 180 Unit A mJ DocID023964 Rev 5 3/21 Electrical characteristics STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Symbol Parameter Table 5. On /off states Test conditions Drain-source V(BR)DSS breakdown voltage ID = 1 mA, VGS = 0 IDSS IGSS VGS(th) RDS(on) Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 °C Gate-body leakage current (VDS = 0) VGS = ± 25 V Gate threshold voltage VDS = VGS, ID = 250 μA Static drain-source on-resistance VGS = 10 V, ID = 9 A Min. Typ. Max. Unit 600 V 1 μA 100 μA ±10 μA 2 3 4V 0.168 0.19 Ω Symbol Parameter Table 6. Dynamic Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 1060 - pF - 55 - pF pF - 2.2 - (1) Equivalent output Coss eq. capacitance VDS = 0 to 480 V, VGS = 0 - 258 - pF Intrinsic gate RG resistance f = 1 MHz, ID = 0 - 7 -Ω Qg Total gate charge VDD = 480 V, ID = 18 A, Qgs Gate-source charge VGS = 10 V Qgd Gate-drain charge (see Figure 17) - 29 - nC - 6 - nC - 12 - nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Symbol Table 7. Switching times Parameter Test conditions td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16 and 21) Min. - Typ. Max. Unit 14 - ns 9 - ns 60 - ns 15 - ns 4/21 DocID023964 Rev 5 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical characteristics Symbol Table 8. Source drai.


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