STP24N60M2

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg 22 Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB TAB 123 I2PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes VDS @ TJmax RDS(on) max ID STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 650 V 0.19 Ω 18 A Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications G(1) S(3) AM01476v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 Table 1. Device summary Marking Package 24N60M2 2 D PAK 2 I PAK TO-220 TO-247 Packaging Tape and reel Tube February 2014 This is information on a product in full production. DocID023964 Rev 5 1/21 www.st.com 21 Contents Contents STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . ....