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IXGH30N120C3H1

IXYS Corporation

High speed PT IGBTs

Preliminary Technical Information GenX3TM 1200V IGBT IXGH30N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES IC...


IXYS Corporation

IXGH30N120C3H1

File Download Download IXGH30N120C3H1 Datasheet


Description
Preliminary Technical Information GenX3TM 1200V IGBT IXGH30N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES IC100 VCE(sat) tfi(typ) = 1200V = 24A ≤ 4.2V = 42ns Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Mounting Torque Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Maximum Ratings 1200 1200 V V ±20 V ±30 V 48 A 24 A 115 A 20 A 250 mJ ICM = 60 @VCE ≤ 1200 250 A V W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 300 °C 260 °C 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES VGE= 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 24A, VGE = 15V, Note 2 TJ = 125°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 100 μA 1.5 mA ±100 nA 3.6 4.2 V 3.2 V TO-247AD G C E TAB G = Gate E = Emitter C = Collector TAB = Collector Features z Optimized for Low Conduction and Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z AC Motor Speed Control z DC Servo and Robot Drives z DC Choppers z Uninterruptible Power Suppl...




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