High speed PT IGBTs
Preliminary Technical Information
GenX3TM 1200V IGBT IXGH30N120C3H1
High speed PT IGBTs for 10-50kHz Switching
VCES IC...
Description
Preliminary Technical Information
GenX3TM 1200V IGBT IXGH30N120C3H1
High speed PT IGBTs for 10-50kHz Switching
VCES IC100 VCE(sat) tfi(typ)
= 1200V = 24A ≤ 4.2V = 42ns
Symbol
VCES VCGR
VGES VGEM
IC25 IC100 ICM IA EAS SSOA (RBSOA)
PC
TJ TJM Tstg
Md
TL TSOLD
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Mounting Torque Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s
Maximum Ratings
1200 1200
V V
±20 V ±30 V
48 A 24 A 115 A
20 A 250 mJ
ICM = 60 @VCE ≤ 1200
250
A V
W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
300 °C 260 °C
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES VGE= 0V TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 24A, VGE = 15V, Note 2 TJ = 125°C
Characteristic Values
Min.
Typ. Max.
1200
V
3.0 5.0 V
100 μA 1.5 mA
±100 nA
3.6 4.2 V 3.2 V
TO-247AD
G C E
TAB
G = Gate E = Emitter
C = Collector TAB = Collector
Features
z Optimized for Low Conduction and Switching Losses
z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package
Advantages
z High Power Density z Low Gate Drive Requirement
Applications
z AC Motor Speed Control z DC Servo and Robot Drives z DC Choppers z Uninterruptible Power Suppl...
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