9D0N90NA Datasheet | KHB9D0N90NA





(Datasheet) 9D0N90NA Datasheet PDF Download

Part Number 9D0N90NA
Description KHB9D0N90NA
Manufacture KEC
Total Page 6 Pages
PDF Download Download 9D0N90NA Datasheet PDF

Features: SEMICONDUCTOR TECHNICAL DATA General Des cription This planar stripe MOSFET has better characteristics, such as fast sw itching time, low on resistance, low ga te charge and excellent avalanche chara cteristics. It is mainly suitable for e lectronic ballast and switching mode po wer supplies. FEATURES VDSS(Min.)= 900 V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ.) @VGS =10V Qg(typ.) = 54nC MAXIMUM RATING (Tc=25 ) CHARACTE RISTIC Drain-Source Voltage Gate-Sour ce Voltage Drain Current @TC=25 Pulse d (Note1) Single Pulsed Avalanche Ene rgy (Note 2) Repetitive Avalanche Ener gy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc =25 Derate above25 Maximum Junction Te mperature Storage Temperature Range T hermal Characteristics Thermal Resista nce, Junction-to-Case Thermal Resistan ce, Case-to-Sink Thermal Resistance, J unction-to-Ambient SYMBOL RATING VDSS 900 VGSS ID IDP EAS 30 9.0 36 900 EAR 20.5 dv/dt 4.5 280 PD 2.22 Tj 150 Tstg -55 150 UNIT V .

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 900V, ID= 9A
Drain-Source ON Resistance :
RDS(ON)=1.05(Typ.) @VGS =10V
Qg(typ.) =54nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed
(Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL RATING
VDSS
900
VGSS
ID
IDP
EAS
30
9.0
36
900
EAR 20.5
dv/dt
4.5
280
PD
2.22
Tj 150
Tstg -55 150
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
RthJC
RthCS
RthJA
0.45
0.24
40
/W
/W
/W
D
G
Marking
1 KHB
9D0N90N
A 725
2
KHB9D0N90NA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
N
O
D
E
d
PP
123
Q
1. Gate
2. Drain
3. Source
B
K
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
M K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
T N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
TO-3P(N)-E
S
1 PRODUCT NAME
2 LOT NO
2008. 4. 17
Revision No : 3
1/6

                 






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