.
DESCRIPTION
2SC5883 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for hi...
.
DESCRIPTION
2SC5883 is a ultra super mini package resin sealed silicon
NPN epitaxial
transistor, It is designed for high frequency application. Since it is a super-thin flat lead type package,a high-density
mounting are possible.
FEATURE
●Super-thin flat lead type package. t=0.45mm
●High gain bandwidth product. fT=8.0GHz
●High gain, low noise. ●Can operate at low voltage.
0.45
1.2 0.8 0.4 0.4
〈SMALL-SIGNAL
TRANSISTOR〉
2SC5883
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON
NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit：ｍｍ
0.25
0.2 0.8 0.2
① ②③
APPLICATION
For TV tuners, high frequency amplifier , celluar phone system.
JEITA：
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO Collector to Base voltage VCEO Collector to Emitter voltage VEBO Emitter to Base voltage I O Collector current Pc Collector dissipation
Tj Junction temperature Tstg Storage temperature
Ratings 15 6 1.5 50 80
＋125 -55～＋125
Unit V V V mA mW ℃ ℃
TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
Collector cut off current Emitter cut off current DC forward current gain Gain bandwidth product Collector output capacitance Insertion power gain Noise figure
ICBO IEBO hFE
fT Cob |S21|2 NF
V CB=10V, I E=0mA V EB=1V, I C=0mA V CE=5V, I C=10mA V CE=5V, I E=10mA V CB=5V, I E=0mA,f=1MHz V CE=5V, I C=10mA,f=1GHz V CE=5V, I C=5mA,f=1GHz
Limits Min Typ Max
Unit
- - 1.0 μA
- - 1.0 μA
50 - 250
5.0 8.0
- GHz
- 0.8 - pF
9.0 12.0
-
dB
- 1....
