APM4953 MOSFET Datasheet

APM4953 Datasheet, PDF, Equivalent


Part Number

APM4953

Description

Dual P-Channel Enhancement Mode MOSFET

Manufacture

Anpec Electronics Coropration

Total Page 9 Pages
Datasheet
Download APM4953 Datasheet


APM4953
APM4953
Dual P-Channel Enhancement Mode MOSFET
Features
Pin Description
-30V/-4.9A, RDS(ON) = 53m(typ.) @ VGS = -10V
RDS(ON) = 80m(typ.) @ VGS = -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Applications
5 
/
5!
/"
& ,
% ,
$,
#,
SO 8
5 5
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
/ /
Ordering and Marking Information
, ,
,,
P-Channel MOSFET
APM4953
APM4953 K :
H andling C ode
Temp. Range
Package Code
A P M 4953
XXXXX
Package Code
K : SO -8
O peration Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
-30
V
±25
-4.9
A
-30
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
1
www.anpec.com.tw

APM4953
APM4953
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθJA*
Parameter
Maximum Power Dissipation
TA = 25°C
Maximum Junction Temperature
TA = 100°C
Storage Temperature Range
Thermal Resistance - Junction to Ambient
Rating
2.5
1.0
150
-55 to 150
50
Electrical Characteristics (TA=25°C unless otherwise noted)
Unit
W
°C
°C/W
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=-250µA
IDSS
VGS(th)
IGSS
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
VDS=-24V , VGS=0V
VDS=VGS , IDS=-250µA
VGS=±25V , VDS=0V
Drain-Source On-state
RDS(ON) Resistance>
VGS=-10V , IDS=-4.9A
VGS=-4.5V , IDS=-3.6A
VSD Diode Forward Voltage>
Dynamic=
ISD=-1.7A , VGS=0V
Qg Total Gate Charge
VDS=-15V , IGS=-10V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
lD=-4.6A
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=-15V , ID=-2A ,
VGEN=-10V , RG=6
RL=7.5
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss Reverse Transfer Capacitance Frequency=1.0MHz

  N otesa : Pulse test ; pulse width 300µs, duty cycle 2%
b : Guaranteed by design, not subject to production testing
APM4953
Min. Typ=. Max.
Unit
-30 V
-1 µA
-1 -1.5 -2
V
±100 nA
53 60
80 95
-0.7 -1.3
m
V
22.3
4.65
2
10
15
22
15
1260
340
220
29
18
20
38
25
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
2
www.anpec.com.tw


Features APM4953 Dual P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-4.9A, RDS(ON) = 53mΩ(typ.) @ V GS = -10V RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Des ign • Reliable and Rugged • SO-8 Pa ckage Applications 5  / 5! /" & , % , $, #, SO − 8 5 5 • Power M anagement in Notebook Computer, Portabl e Equipment and Battery Powered Systems / / Ordering and Marking Informatio n , , ,, P-Channel MOSFET APM4953 APM4953 K : H andling C ode Temp. Ran ge Package Code A P M 4953 XXXXX Packa ge Code K : SO -8 O peration Junction T em p. R ange C : -55 to 150°C H andlin g C ode TU : Tube TR : Tape & Reel XXXX X - Date Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) S ymbol Parameter Rating Unit VDSS VG SS ID* IDM Drain-Source Voltage Gate-S ource Voltage Maximum Drain Current – Continuous TA = 25°C Maximum Drain Cur rent – Pulsed -30 V ±25 -4.9 A -30 * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes.
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