Document
APM4953
Dual P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -30V/-4.9A, RDS(ON) = 53mΩ(typ.) @ VGS = -10V
RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V
• Super High Density Cell Design • Reliable and Rugged • SO-8 Package
Applications
5 / 5! /"
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SO − 8
5 5
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems
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Ordering and Marking Information
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P-Channel MOSFET
APM4953
APM4953 K :
H andling C ode Temp. Range Package Code
A P M 4953 XXXXX
Package Code K : SO -8
O peration Junction Tem p. R ange C : -55 to 150°C
H andling C ode TU : Tube TR : Tape & Reel
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS VGSS ID* IDM
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous TA = 25°C Maximum Drain Current Pulsed
-30 V
±25 -4.9
A -30
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
1
www.anpec.com.tw
APM4953
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol PD
TJ TSTG RθJA*
Parameter
Maximum Power Dissipation
TA = 25°C
Maximum Junction Temperature
TA = 100°C
Storage Temperature Range
Thermal Resistance - Junction to Ambient
Rating 2.5 1.0 150
-55 to 150 50
Electrical Characteristics (TA=25°C unless otherwise noted)
Unit W
°C °C/W
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , IDS=-250µA
IDSS
VGS(th) IGSS
Zero Gate Voltage Drain Current Gate Threshold Voltage
Gate Leakage Current
VDS=-24V , VGS=0V
VDS=VGS , IDS=-250µA VGS=±25V , VDS=0V
Drain-Source On-state RDS(ON) Resistance>
VGS=-10V , IDS=-4.9A VGS=-4.5V , IDS=-3.6A
VSD Diode Forward Voltage> Dynamic=
ISD=-1.7A , VGS=0V
Qg Total Gate Charge
VDS=-15V , IGS=-10V
Qgs Gate-Source Charge Qgd Gate-Drain Charge
lD=-4.6A
td(ON) Tr
td(OFF) Tf
Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VDD=-15V , ID=-2A , VGEN=-10V , RG=6Ω RL=7.5Ω
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss Reverse Transfer Capacitance Frequency=1.0MHz
N otesa : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
APM4953 Min. Typ=. Max.
Unit
-30 V
-1 µA
-1 -1.5 -2
V
±100 nA
53 60 80 95 -0.7 -1.3
mΩ V
22.3 4.65
2 10 15 22 15 1260 340 220
29
18 20 38 25
nC ns pF
Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003
2
www.anpec.com.tw
APM4953
Typical Characteristics
-ID-Drain Current (A)
Output Characteristics
30
25 -V/5= 5,6,7,8,9,10V
20 -V/5=4V
15
10 -V/5=3V
5 -V/5=2V 0
012345678
-VDS - Drain-to-Source Voltage (V)
-ID-Drain Current (A)
Transfer Characteristics
3.