GE4953

GEMOS MOS FIELD EFFECT TRANSISTOR GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). GENERAL FEATURES ● VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package APPLICATIONS ● Battery protection ● Load switch ● Power management Schematic diagram Marking and pin Assignment SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 4953 Device GE4953 Package SOP-8 Reel Size Ø330mm Tape width 12mm ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ，TSTG Limit -30 ±20 -4.9 -30 2.0 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance gFS Co...