GEMOS
MOS FIELD EFFECT TRANSISTOR
GE4953
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The GE4953 uses advanced t...
GEMOS
MOS FIELD EFFECT
TRANSISTOR
GE4953
P-CHANNEL MOS FIELD EFFECT
TRANSISTOR
DESCRIPTION
The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
GENERAL FEATURES
● VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
APPLICATIONS
● Battery protection ● Load switch ● Power management
Schematic diagram
Marking and pin Assignment SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking 4953
Device GE4953
Package SOP-8
Reel Size Ø330mm
Tape width 12mm
ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous @ Current-Pulsed
(Note 1)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD
TJ,TSTG
Limit -30 ±20 -4.9 -30 2.0 -55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
62.5
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
OFF CHARACTERISTICS Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
gFS
Co...