Document
74HC1G04; 74HCT1G04
Inverter
Rev. 5 — 25 September 2013
Product data sheet
1. General description
The 74HC1G04; 74HCT1G04 is a single inverter. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.
2. Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V Input levels:
For 74HC1G04: CMOS level For 74HCT1G04: TTL level Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays ESD protection: HBM JESD22-A114E exceeds 2000 V MM JESD22-A115-A exceeds 200 V Multiple package options Specified from 40 C to +85 C and 40 C to +125 C
3. Ordering information
Table 1. Ordering information Type number Package
Temperature range Name 74HC1G04GW 40 C to +125 C TSSOP5 74HCT1G04GW 74HC1G04GV 40 C to +125 C SC-74A 74HCT1G04GV
Description plastic thin shrink small outline package; 5 leads; body width 1.25 mm
plastic surface-mounted package; 5 leads
Version SOT353-1
SOT753
NXP Semiconductors
74HC1G04; 74HCT1G04
Inverter
4. Marking
Table 2. Marking codes Type number 74HC1G04GW 74HCT1G04GW 74HC1G04GV 74HCT1G04GV
Marking[1] HC TC H04 T04
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
2A
Y4
21 4
mna108
Fig 1. Logic symbol
mna109
Fig 2. IEC logic symbol
6. Pinning information
6.1 Pinning
74HC1G04 74HCT1G04
n.c. 1 A2
5 VCC
Fig 4. Pin configuration
GND 3
4Y 001aaf089
6.2 Pin description
Table 3. Symbol n.c. A GND Y VCC
Pin description Pin 1 2 3 4 5
Description not connected data input ground (0 V) data output supply voltage
AY mna110
Fig 3. Logic diagram
74HC_HCT1G04
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
2 of 12
NXP Semiconductors
74HC1G04; 74HCT1G04
Inverter
7. Functional description
Table 4. Function table H = HIGH voltage level; L = LOW voltage level Input A L H
8. Limiting values
Output Y H L
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). [1]
Symbol Parameter
Conditions
Min Max Unit
VCC supply voltage
IIK
input clamping current
VI < 0.5 V or VI > VCC + 0.5 V
IOK
output clamping current
VO < 0.5 V or VO > VCC + 0.5 V
IO output current
0.5 V < VO < VCC + 0.5 V
0.5 +7.0 V - 20 mA - 20 mA - 12.5 mA
ICC IGND Tstg Ptot
supply current ground current storage temperature total power dissipation
Tamb = 40 C to +125 C
25 65 [2] -
25 +150 200
mA mA C mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] Above 55 C, the value of Ptot derates linearly with 2.5 mW/K.
9. Recommended operating conditions
Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VCC VI VO Tamb t/V
supply voltage input voltage output voltage ambient temperature input transition rise and fall rate
VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V
74HC1G04 Min Typ Max 2.0 5.0 6.0
0 - VCC 0 - VCC 40 +25 +125 - - 625 - - 139 - - 83
74HCT1G04 Min Typ Max 4.5 5.0 5.5
0 - VCC 0 - VCC 40 +25 +125 --- - 139 ---
Unit
V V V C ns/V ns/V ns/V
74HC_HCT1G04
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
3 of 12
NXP Semiconductors
74HC1G04; 74HCT1G04
Inverter
10. Static characteristics
Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C
Min Typ Max Min
Max
For type 74HC1G04
VIH HIGH-level input voltage
VIL LOW-level input voltage
VOH HIGH-level output voltage
VOL LOW-level output voltage
II input leakage current ICC supply current CI input capacitance For type 74HCT1G04
VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V VI = VIH or VIL
IO = 20 A; VCC = 2.0 V IO = 20 A; VCC = 4.5 V IO = 20 A; VCC = 6.0 V IO = 2.0 mA; VCC = 4.5 V IO = 2.6 mA; VCC = 6.0 V VI = VIH or VIL IO = 20 A; VCC = 2.0 V IO = 20 A; VCC = 4.5 V IO = 20 A; VCC = 6.0 V IO = 2.0 mA; VCC = 4.5 V IO = 2.6 mA; VCC = 6.0 V VI = VCC or GND; VCC = 6.0 V VI = VCC or GND; IO = 0 A; VCC = 6.0 V
1.5 1.2
-
3.15 2.4
-
4.2 3.2
-
- 0.8 0.5
- 2.1 1.35
- 2.8 1.8
1.9 2.0 4.4 4.5 5.9 6.0 4.13 4.32 5.63 5.81
-
- 0 0.1 - 0 0.1 - 0 0.1 - 0.15 0.33 - 0.16 0.33 - - 1.0 - - 10
- 1.5 -
1.5 3.15 4.2
-
1.9 4.4 5.9 3.7 5.2
-
-
0.5 1.35 1.8
-
0.1 0.1 0.1 0.4 0.4 1.0 20
-
VIH
HIGH-level input
VCC = 4.5 V to 5.5 V
voltage
2.0 1.6
-
2.0
-
VIL
LOW-level input
VCC = 4.5 V to 5.5 V
voltage
- 1.2 0.8
-
0.8
VOH
HIGH-level output
VI = VIH or VIL
voltage
IO = 20 A; VCC = 4.5 V
4.4 4.5.