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FS70VS-2 Dataheets PDF



Part Number FS70VS-2
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description Nch POWER MOSFET
Datasheet FS70VS-2 DatasheetFS70VS-2 Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE FS70VS-2 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 –0 +0.3 1 5 0.8 B 0.5 q w e wr 2.6 ± 0.4 ¡10V DRIVE ¡VDSS 100V ¡rDS (ON) (MAX) .. 20m Ω ¡ID ....

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MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE FS70VS-2 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 –0 +0.3 1 5 0.8 B 0.5 q w e wr 2.6 ± 0.4 ¡10V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 20m Ω ¡ID ......................................................................................... 70A ¡Integrated Fast Recovery Diode (TYP.) ........... 120ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 100 ±20 70 280 70 70 280 125 –55 ~ +150 –55 ~ +150 1.2 4.5 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH (1.5) MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 100 — — 2.0 — — — — — — — Typ. — — — 3.0 14 0.49 53 6540 1150 500 95 175 330 190 1.0 — 120 Max. — ±0.1 0.1 4.0 20 0.7 — — — — — — — — 1.5 1.00 — Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 50V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω — — — — — — IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 100ms 1ms 10ms tw = 10ms 160 120 80 101 7 5 3 2 40 0 0 50 100 150 200 DC 100 7 TC = 25°C 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100 VGS = 20V 10V 8V TC = 25°C Pulse Test DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 6V VGS = 20V 10V 8V 6V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 80 DRAIN CURRENT ID (A) 40 5V 60 PD = 125W 30 40 5V 20 20 10 4V 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2.


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