Document
MITSUBISHI Nch POWER MOSFET
FS70VS-2
HIGH-SPEED SWITCHING USE
FS70VS-2
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
0 –0
+0.3
1 5 0.8
B
0.5
q w e wr
2.6 ± 0.4
¡10V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 20m Ω ¡ID ......................................................................................... 70A ¡Integrated Fast Recovery Diode (TYP.) ........... 120ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 ±20 70 280 70 70 280 125 –55 ~ +150 –55 ~ +150 1.2
4.5
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
(1.5)
MITSUBISHI Nch POWER MOSFET
FS70VS-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 100 — — 2.0 — — — — — — — Typ. — — — 3.0 14 0.49 53 6540 1150 500 95 175 330 190 1.0 — 120 Max. — ±0.1 0.1 4.0 20 0.7 — — — — — — — — 1.5 1.00 —
Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 50V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω
— — — — — —
IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2
100ms 1ms 10ms tw = 10ms
160
120
80
101 7 5 3 2
40
0
0
50
100
150
200
DC 100 7 TC = 25°C 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 20V 10V 8V TC = 25°C Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
6V VGS = 20V 10V 8V 6V TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
40
5V
60
PD = 125W
30
40
5V
20
20
10
4V
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2.