LBC847BDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. 6 54 LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G Q2 12 Q1 3 See Table MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous V CEO V CBO V EBO IC BC846 65 80 6.0 100 BC847 BC848 45 30 50 30 6.0 5.0 100 100 Unit V V V mAdc 6 5 4 1 2 3 SOT-363 /SC-88 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. ORDERING INFORMATION Device LBC846BDW1T1G LBC846BDW1T3G LBC847BDW1T1G LBC847BDW1T3G LBC847CDW1T1G LBC847CDW1T3G LBC848BDW1T1G LBC848BDW1T3G LBC848CDW1T1G LBC848CDW1T3G Marking 1B 1B 1F 1F 1G 1G 1K 1K 1L 1L Symbol PD R θJA T J , T stg Max Unit 380 mW 250 mW 3.0 328 –55 to +150 mW/°C °C/W °C Shipping 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 1/6 LESHAN RADIO COMPANY, LTD. LBC846BDW1T1G, LBC847BDW1T1G, LBC847CDW1T1G, LBC848BDW1T1G, LBC848CDW1T1G ELECTRI...