LBC846ADW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 6 54 LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G S-LBC846ADW1T1G S-LBC846BDW1T1G S-LBC847BDW1T1G S-LBC847CDW1T1G S-LBC848BDW1T1G S-LBC848CDW1T1G Q2 Q1 See Table 6 5 4 12 MAXIMUM RATINGS 3 Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous V CEO V CBO V EBO IC BC846 65 80 6.0 100 BC847 BC848 45 30 50 30 6.0 5.0 100 100 Unit V V V mAdc 1 2 3 SOT-363 /SC-88 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. Symbol PD R θJA T J , T stg Max Unit 380 mW 250 mW 3.0 328 –55 to +150 mW/°C °C/W °C ORDERING INFORMATION LBC846ADW1T1G LBC846ADW1T3G Device S-LBC846ADW1T1G S-LBC846ADW1T3G LBC846BDW1T1G LBC846BDW1T3G LBC847BDW1T1G LBC847BDW1T3G LBC847CDW1T1G S-LBC846BDW1T1G S-LBC846BDW1T3G S-LBC847BDW1T1G S-LBC847BDW1T3G S-LBC847CDW1T1G LBC847C...