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LBC856BDW1T1G Dataheets PDF



Part Number LBC856BDW1T1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Dual General Purpose Transistors
Datasheet LBC856BDW1T1G DatasheetLBC856BDW1T1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. • Device Marking: (S-)LBC856ADW1T1G= 3A (S-)LBC856BDW1T1G= 3B (S-)LBC857BDW1T1G= 3F (S-)LBC857CDW1T1G= 3G (S-)LBC858BDW1T1G= 3K (S-)LBC858CDW1T1G = 3L MAXIMUM RATINGS Rating Symbol BC856 B.

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. • Device Marking: (S-)LBC856ADW1T1G= 3A (S-)LBC856BDW1T1G= 3B (S-)LBC857BDW1T1G= 3F (S-)LBC857CDW1T1G= 3G (S-)LBC858BDW1T1G= 3K (S-)LBC858CDW1T1G = 3L MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous VCEO VCBO VEBO IC –65 –80 –5.0 –100 –45 –50 –5.0 –100 –30 –30 –5.0 –100 V V V mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation Per Device FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C PD Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in Max 380 250 3.0 328 –55 to +150 Unit mW mW/°C °C/W °C ORDERING INFORMATION Device LBC85*BDW1T1G LBC85*BDW1T3G Shipping 3000/Tape & Reel 10000/Tape & Reel LBC85** DW1T1G S-LBC85** DW1T1G 65 4 1 2 3 SOT-363 (3) (2) (1) Q1 Q2 (4) (5) (6) DEVICE MARKING See Table Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) LBC856 Series LBC857 Series LBC858 Series Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) LBC856 Series LBC857 Series LBC858 Series Collector–Base Breakdown Voltage (IC = –10 mA) LBC856 Series LBC857 Series LBC858 Series Emitter–Base Breakdown Voltage (IE = –1.0 mA) LBC856 Series LBC857 Series LBC858 Series Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) LBC856A LBC856B, LBC857B, LBC858B LBC857C, LBC858C (IC = –2.0 mA, VCE = –5.0 V) LBC856A LBC856B, LBC857B, LBC858B LBC857C, LBC858C Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base–Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) Symbol V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) VBE(on) fT Cob NF Min –65 –45 –30 –80 –50 –30 –80 –50 –30 –5.0 –5.0 –5.0 – – – – – 125 220 420 – – – – –0.6 – 100 – – Typ Max Unit V –– –– –– V –– –– –– V –– –– –– V –– –– –– – –15 nA – –4.0 µA 90 – 150 – 270 – 180 250 290 475 520 800 – –0.3 – –0.65 –0.7 – –0.9 – – –0.75 – –0.82 – V V V – – MHz – 4.5 pF – 10 dB Rev.O 2/6 LESHAN RADIO COMPANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G TYPICAL CHARACTERISTICS – LBC856 hFE, DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25°C 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) Figure 1. DC Current Gain V, VOLTAGE (VOLTS) -1.0 TJ = 25°C -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Figure 2. “On” Voltage VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 -1.6 IC = -1.2 -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 Figure 3. Collector Saturation Region θVB, TEMPERATURE COEFFICIENT (mV/ °C) -1.0 -1.4 -1.8 θVB for VBE -2.2 -55°C to 125°C -2.6 -3.0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient C, CAPACITANCE (pF) 40 TJ = 25°C 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance -50 -100 făT, CURRENT-GAIN - BANDWIDTH PRODUCT 500 VCE = -5.0 V 200 100 50 20 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 6. Current–Gain – Bandwidth Product Rev.O 3/6 LESHAN RADIO COMPANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G hFE, NORMALIZED DC CURRENT GAIN TYPICAL CHARACTERISTICS – LBC857/LBC858 2.0 1.5 VCE = -10 V TA = 25°C 1.0 0.7 0.5 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) .


LBC856ADW1T1G LBC856BDW1T1G LBC857BDW1T1G


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