Document
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
• Device Marking:
(S-)LBC856ADW1T1G= 3A (S-)LBC856BDW1T1G= 3B (S-)LBC857BDW1T1G= 3F (S-)LBC857CDW1T1G= 3G (S-)LBC858BDW1T1G= 3K (S-)LBC858CDW1T1G = 3L
MAXIMUM RATINGS
Rating
Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
VCEO VCBO VEBO
IC
–65 –80 –5.0 –100
–45 –50 –5.0 –100
–30 –30 –5.0 –100
V V V mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C
PD
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
Max 380 250
3.0 328
–55 to +150
Unit mW
mW/°C °C/W
°C
ORDERING INFORMATION
Device LBC85*BDW1T1G LBC85*BDW1T3G
Shipping 3000/Tape & Reel 10000/Tape & Reel
LBC85** DW1T1G S-LBC85** DW1T1G
65 4
1 2 3
SOT-363
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
DEVICE MARKING See Table
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mA)
LBC856 Series
LBC857 Series LBC858 Series
Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0)
LBC856 Series LBC857 Series LBC858 Series
Collector–Base Breakdown Voltage (IC = –10 mA)
LBC856 Series LBC857 Series LBC858 Series
Emitter–Base Breakdown Voltage (IE = –1.0 mA)
LBC856 Series LBC857 Series LBC858 Series
Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain (IC = –10 µA, VCE = –5.0 V)
LBC856A LBC856B, LBC857B, LBC858B
LBC857C, LBC858C
(IC = –2.0 mA, VCE = –5.0 V) LBC856A LBC856B, LBC857B, LBC858B
LBC857C, LBC858C
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA)
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA)
Base–Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = –10 V, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Symbol V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO
ICBO hFE
VCE(sat) VBE(sat) VBE(on)
fT Cob NF
Min
–65 –45 –30
–80 –50 –30
–80 –50 –30
–5.0 –5.0 –5.0
– –
– – – 125 220 420
– –
– –
–0.6 –
100
–
–
Typ Max Unit
V –– –– ––
V –– –– ––
V –– –– ––
V –– –– ––
– –15 nA – –4.0 µA
90 – 150 – 270 – 180 250 290 475 520 800
– –0.3 – –0.65
–0.7 – –0.9 –
– –0.75 – –0.82
–
V V V
– – MHz – 4.5 pF – 10 dB
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G
TYPICAL CHARACTERISTICS – LBC856
hFE, DC CURRENT GAIN (NORMALIZED)
VCE = -5.0 V TA = 25°C 2.0
1.0
0.5
0.2
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
V, VOLTAGE (VOLTS)
-1.0 TJ = 25°C
-0.8 VBE(sat) @ IC/IB = 10
-0.6 VBE @ VCE = -5.0 V
-0.4
-0.2 0 -0.2
VCE(sat) @ IC/IB = 10
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Figure 2. “On” Voltage
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
-1.6
IC = -1.2 -10 mA
-20 mA
-50 mA -100 mA -200 mA
-0.8
-0.4
TJ = 25°C 0 -0.02 -0.05 -0.1
-0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA)
-5.0 -10 -20
Figure 3. Collector Saturation Region
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
-1.0
-1.4
-1.8 θVB for VBE -2.2
-55°C to 125°C
-2.6
-3.0 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
C, CAPACITANCE (pF)
40
TJ = 25°C 20 Cib
10 8.0
6.0 Cob 4.0
2.0 -0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
-50 -100
făT, CURRENT-GAIN - BANDWIDTH PRODUCT
500 VCE = -5.0 V
200 100 50
20
-1.0 -10 -100 IC, COLLECTOR CURRENT (mA)
Figure 6. Current–Gain – Bandwidth Product
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G
hFE, NORMALIZED DC CURRENT GAIN
TYPICAL CHARACTERISTICS – LBC857/LBC858
2.0 1.5 VCE = -10 V
TA = 25°C 1.0
0.7
0.5
0.3
0.2 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc)
.