LESHAN RADIO COMPANY, LTD.
Power Management(dual transistors)
zApplication Power management circuit
zFeatures 1) Power ...
LESHAN RADIO COMPANY, LTD.
Power Management(dual
transistors)
zApplication Power management circuit
zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product
compliance with RoHS requirements. zStructure Silicon epitaxial planar
transistor
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking Shipping
UMF23NDW1T1G
F23 3000/Tape&Reel
UMF23NDW1T3G
F23 10000/Tape&Reel
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−60
Collector-emitter voltage
VCEO
−50
Emitter-base voltage
VEBO
−6
Collector current
IC −150
Collector power dissipation Junction temperature
PC 150 (TOTAL) Tj 150
Storage temperature
Tstg
∗ 120mW per element must not be exceeded.
−55 to +150
Unit V V V mA
mW ∗
C C
Tr2
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current
IC
Output current
IO
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1 Characteristics of built-in
transistor. ∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Limits 50
−10~+40 100 50
150(TOTAL) 150
−55 to +150
Unit V V mA ∗1 mA
mW ∗2 C C
UMF23NDW1T1G
65 4
1 2 3
SOT-363
(3) (2)
(1)
Q2
R1
R2
(4)
R1=10kΩ R2=10kΩ
(5)
Q1 (6)
1/5
LESHAN RADIO COMPANY, LTD.
UMF23NDW1T1G
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-...