LMBT5551DW1T1G

LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR FEATURE ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT5551DW1T1G S-LMBT5551DW1T1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G S-LMBT5551DW1T1G LMBT5551DW1T3G S-LMBT5551DW1T3G MAXIMUM RATINGS G1 G1 3000/Tape&Reel 10000/Tape&Reel Rating Symbol Value Collector–Emitter Voltage V CEO 140 Collector–Base Voltage V CBO 160 Emitter–Base Voltage V EBO 6.0 Unit Vdc Vdc Vdc 6 5 4 1 2 3 SOT-363/SC-88 C2 B1 E1 Collector Current — Continuous I C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 600 mAdc Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C E2 B2 C1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) V (BR)CEO 160 — Vdc Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) V(BR)CBO 180 — Vdc Emitter–Base Breakdown Vo...