LESHAN RADIO COMPANY, LTD.
DUAL NPN SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
FEATURE ƽ We declare that the material of pr...
LESHAN RADIO COMPANY, LTD.
DUAL
NPN SMALL SIGNAL SURFACE
MOUNT
TRANSISTOR
FEATURE ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT5551DW1T1G S-LMBT5551DW1T1G
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5551DW1T1G S-LMBT5551DW1T1G LMBT5551DW1T3G S-LMBT5551DW1T3G
MAXIMUM RATINGS
G1 G1
3000/Tape&Reel 10000/Tape&Reel
Rating
Symbol
Value
Collector–Emitter Voltage
V CEO
140
Collector–Base Voltage
V CBO
160
Emitter–Base Voltage
V EBO
6.0
Unit Vdc Vdc Vdc
6 5
4
1 2
3
SOT-363/SC-88
C2 B1 E1
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
600 mAdc
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit
225 mW
1.8 mW/°C 556 °C/W
300 mW
2.4 417 –55 to +150
mW/°C °C/W
°C
E2 B2 C1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0)
V (BR)CEO 160 — Vdc
Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0)
V(BR)CBO 180 — Vdc
Emitter–Base Breakdown Vo...