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LDTC144EM3T5G Dataheets PDF



Part Number LDTC144EM3T5G
Manufacturers LRC
Logo LRC
Description Bias Resistor Transistors
Datasheet LDTC144EM3T5G DatasheetLDTC144EM3T5G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G Series With Monolithic Bias Resistor Network S-LDTC114EM3T5G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter 3 resistor. The BRT eliminates these.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G Series With Monolithic Bias Resistor Network S-LDTC114EM3T5G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter 3 resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-723 package 2 which is designed for low power surface mount applications. 1 ƽSimplifies Circuit Design ƽReduces Board Space SOT-723 ƽReduces Component Count ƽThe SOT-723 Package can be Soldered using Wave or Reflow. ƽAvailable in 4 mm, 8000 Unit Tape & Reel ƽThese are Pb-Free Devices. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. PIN 1 BASE (INPUT) R1 R2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) Rating Symbol Value Unit Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Collector Current IC THERMAL CHARACTERISTICS Characteristic Symbol 50 50 100 Max Vdc Vdc mAdc Unit MARKING DIAGRAM 3 XX M Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient PD RθJA 260 (Note 1) 600 (Note 2) 2.0 (Note 1) 4.8 (Note 2) 480 (Note 1) 205 (Note 2) mW mW/°C °C/W 12 xx = Specific Device Code M = Date Code Junction Temperature TJ 150 °C Storage Temperature Range Tstg –55 to +150 °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Rev.O 1/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series DEVICE MARKING AND RESISTOR VALUES Device Marking LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G S-LDTC114EM3T5G S-LDTC124EM3T5G S-LDTC144EM3T5G S-LDTC114YM3T5G S-LDTC114TM3T5G S-LDTC143TM3T5G S-LDTC123EM3T5G S-LDTC143EM3T5G S-LDTC143ZM3T5G S-LDTC124XM3T5G S-LDTC123JM3T5G S-LDTC115EM3T5G S-LDTC144WM3T5G S-LDTC144TM3T5G 8A 8B 8C 8D 94 8F 8H 8J 8K 8L 8M 8N 8P 8T R1 (K) 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 47 R2 (K) 10 22 47 47 ∞ ∞ 2.2 4.7 47 47 47 100 22 ∞ Package SOT−723 Shipping 8000/Tape & Reel Rev.O 2/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G ICBO ICEO IEBO − − − − − − − − − − − − − − − − − 100 nAdc − 500 nAdc − 0.5 mAdc − 0.2 − 0.1 − 0.2 − 0.9 − 1.9 − 2.3 − 1.5 − 0.18 − 0.13 − 0.2 − 0.05 − 0.13 − 0.2 Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) V(BR)CBO V(BR)CEO 50 50 − − − Vdc − Vdc DC Current Gain (VCE = 10 V, IC = 5.0 mA) LDTC114EM3T5G hFE 35 60 LDTC124EM3T5G 60 100 LDTC144EM3T5G 80 140 LDTC114YM3T5G 80 140 LDTC114TM3T5G 160 350 LDTC143TM3T5G 160 350 LDTC123EM3T5G 8.0 15 LDTC143EM3T5G 15 30 LDTC143ZM3T5G 80 200 LDTC124XM3T5G 80 150 LDTC123JM3T5G 80 140 LDTC115EM3T5G 80 150 LDTC144WM3T5G 80 140 LDTC144TM3T5G 160 350 − − − − − − − − − − − − − − Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) LDTC123EM3T5G (IC = 10 mA, IB = 1 mA) LDTC143TM3T5G/LDTC114TM3T5G/ LDTC143EM3T5G/LDTC143ZM3T5G/ LDTC124XM3T5G/LDTC144TM3T5G VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) LDTC114EM3T5G LDTC124EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC144EM3T5G LDTC144TM3T5G LDTC115EM3T5G LDTC144WM3T5G 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. VOL − − − − − − − − − − − − − − Vdc − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 − 0.2 Rev.O 3/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol ON CHARACTERISTICS (Note 4) Characteristic Symbol Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V,.


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