IRL3715ZPbF

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95581 IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 11m 7.0nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715Z D2Pak IRL3715ZS TO-262 IRL3715ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds fMounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case fCase-to-Sink, Flat Greased Surface fÃJunction-to-Ambient gJunction-to-Ambient (PCB Mount) Notes  through † are on page 12 www.irf.com Max. 20 ± 20 50 h 36 h 200 45 23 0.30 -55 to + 175 300 (1.6mm from case) y y10 lbf in (1.1N m) Typ. ––– 0.50 ––– ––– Max. 3.33 ––– 62 40 Units V A W W/°C °C Units °C/W 1 07/20/04 IRL3715Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate T...