IRF7809AVPbF

N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 100% Tested for Rg Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including TRhDSe(onI)R, gFa7t8e0c9hAaVrgeofafenrds Cdv/dt-induced turn-on particulary low RDS(on) immunity. and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current TA = 25°C TL = 90°C Power Dissipation TA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead Symbol VDS VGS ID IDM PD TJ, TSTG IS ISM RθJA RθJL PD - 95212A IRF7809AVPbF SO-8 S1 S2 S3 G4 AA 8D 7D 6D 5D Top View DEVICE CHAR...