2SC2078
NPN Epitaxial Planar Silicon Transistor
Application：
High frequency power amplifier High Gain：Gp≥12dB
@Vcc=12V. ...
2SC2078
NPN Epitaxial Planar Silicon
Transistor
Application：
High frequency power amplifier High Gain：Gp≥12dB
@Vcc=12V. f=27MHz Po=4W Package：TO-220AB
Absolute Maximum Ratings at Ta = 25°C
Item Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol VCBO VCEO VEBO IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Ratings 80 35 5 3 5 1.2 10 150 -55---125
Unit V V V A A W W °C °C
Electrical Characteristics at Ta = 25°C
Item
Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Output capacitance Output power Power efficiency
Symbol V(BR)CBO V(BR)CEO
ICBO IEBO VCE(sat)
hFE fT Cob Po
Test conditions IC=100μA, IB=0 IC=1mA, IB=0
VCB=40V, IE=0 VEB=4V, IC=0 IC=1A, IB=0.1A
VCE=5V, IC=0.5A VCE=10V, IC=0.1A VCB=10V, f=1MHz VCC=12V, f=27MHz, Pi=0.2W
Min 80 35
40
4.0 60
Ratings Typ Max
0.16
10 10 0.6
200 150 45 60
Unit V V
μA μA V
* MHz pF W %
The 2SC2078 are classified by hFE as follows : C: 40 to 80
D: 80 to120
E: 100 to 200
...
