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LDTA124EET1G Dataheets PDF



Part Number LDTA124EET1G
Manufacturers LRC
Logo LRC
Description Bias Resistor Transistor
Datasheet LDTA124EET1G DatasheetLDTA124EET1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors S-LDTA114EET1G Series with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individu.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors S-LDTA114EET1G Series with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC-89 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Rating VCBO VCEO IC 50 Vdc 50 Vdc 100 mAdc Symbol Value Unit Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) PD RqJA 200 mW 1.6 mW/°C 600 °C/W Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) PD RqJA 300 mW 2.4 mW/°C 400 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. SC-89 PIN 1 BASE (INPUT) R1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) Rev.B 1/6 LESHAN RADIO COMPANY, LTD. LDTA114EET1G Series,S-LDTA114EET1G Series ORDERING INFORMATION AND RESISTOR VALUES Device Marking R1 (K) LDTA114EET1G 6A 10 LDTA124EET1G 6B 22 LDTA144EET1G 6C 47 LDTA114YET1G 6D 10 LDTA114TET1G 6E 10 LDTA143TET1G 6F 4.7 LDTA123EET1G 6H 2.2 R2 (K) 10 22 47 47 ∞ ∞ 2.2 LDTA143EET1G 43 4.7 4.7 LDTA143ZET1G 6K 4.7 47 LDTA124XET1G 6L 22 47 LDTA123JET1G 6M 2.2 47 LDTA115EET1G 6N 100 100 LDTA144WET1G 6P 47 22 Package SC−89 SC−89 SC−89 SC−89 SC−89 SC−89 SC−89 SC−89 SC−89 SC−89 SC−89 SC−89 SC−89 Shipping† 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) LDTA114EET1G LDTA124EET1G LDTA144EET1G LDTA114YET1G LDTA114TET1G LDTA143TET1G LDTA123EET1G LDTA143EET1G LDTA143ZET1G LDTA124XET1G LDTA123JET1G LDTA115EET1G LDTA144WET1G Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Symbol ICBO ICEO IEBO V(BR)CBO V(BR)CEO Min Typ Max Unit − − 100 nAdc − − 500 nAdc − − 0.5 mAdc − − 0.2 − − 0.1 − − 0.2 − − 0.9 − − 1.9 − − 2.3 − − 1.5 − − 0.18 − − 0.13 − − 0.2 − − 0.05 − − 0.13 50 − − Vdc 50 − − Vdc Rev.B 2/6 LESHAN RADIO COMPANY, LTD. LDTA114EET1G Series,S-LDTA114EET1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) LDTA114EET1G LDTA124EET1G LDTA144EET1G LDTA114YET1G LDTA114TET1G LDTA143TET1G LDTA123EET1G LDTA143EET1G LDTA143ZET1G LDTA124XET1G LDTA123JET1G LDTA115EET1G LDTA144WET1G Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) LDTA123EET1G (IC = 10 mA, IB = 1 mA) LDTA114TET1G/LDTA143TET1G LDTA143ZET1G/LDTA124XET1G LDTA143EET1G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) LDTA114EET1G LDTA124EET1G (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) LDTA114YET1G LDTA114TET1G LDTA143TET1G LDTA123EET1G LDTA143EET1G LDTA143ZET1G LDTA124XET1G LDTA123JET1G LDTA144EET1G LDTA115EET1G LDTA144WET1G Output Voltage .


LDTA114EET1G LDTA124EET1G LDTA144EET1G


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