N-Channel UltraFET Trench MOSFET
FDD3672_F085 N-Channel UltraFET Trench MOSFET
March 2011
FDD3672_F085
N-Channel UltraFET Trench MOSFET
100V, 44A, 28m...
Description
FDD3672_F085 N-Channel UltraFET Trench MOSFET
March 2011
FDD3672_F085
N-Channel UltraFET Trench MOSFET
100V, 44A, 28mΩ
Features
Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A Typ Qg(10) = 24nC at VGS = 10V Low Miller Charge Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant
Applications
DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier
FDD3672_F085 Rev. C
1
www.fairchildsemi.com
FDD3672_F085 N-Channel UltraFET Trench MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Source Voltage Drain Current Continuous (TC < 30oC, VGS = 10V) Pulsed
EAS Single Pulse Avalanche Energy Power Dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
RθJC RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area
Ratings 100 ±20 44
See Figure 4 73 144 0.96
-55 to +175
1.04
52
Units V V A mJ W
W/oC oC
oC/W oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD3672
FDD3672_F085
Package TO-252AA
Reel Size 330mm
Tape Width 16mm
Quantity 2500 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Co...
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