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2SK4090 Dataheets PDF



Part Number 2SK4090
Manufacturers Renesas
Logo Renesas
Description MOSFET
Datasheet 2SK4090 Datasheet2SK4090 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4090 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 11 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low gate to drain charge QGD = 6 nC TYP. (VDD .

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4090 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 11 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low gate to drain charge QGD = 6 nC TYP. (VDD = 15 V, ID = 30 A) • 4.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4090(1)-S27-AY Note 2SK4090-ZK-E1-AY Note 2SK4090-ZK-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 75 p/tube Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode). PACKAGE TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS 30 ±20 ±64 ±192 36 1.0 150 −55 to +150 35 122.5 V V A A W W °C °C A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH (TO-251) (TO-252) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18634EJ1V0DS00 (1st edition) Date Published February 2007 NS CP(K) Printed in Japan 2007 2SK4090 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note VGS(off) | yfs | RDS(on)1 VDS = VGS, ID = 250 μA VDS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A RDS(on)2 VGS = 4.5 V, ID = 30 A Input Capacitance Ciss VDS = 10 V, Output Capacitance Coss VGS = 0 V, Reverse Transfer Capacitance Crss f = 1 MHz Turn-on Delay Time td(on) VDD = 15 V, ID = 30 A, Rise Time tr VGS = 10 V, Turn-off Delay Time Fall Time td(off) tf RG = 3 Ω Total Gate Charge QG1 VDD = 15 V, VGS = 10 V, ID = 30 A QG2 VDD = 15 V, VGS = 4.5 V, ID = 30 A Gate to Source Charge QGS VDD = 15 V, ID = 30 A Gate to Drain Charge QGD Gate Resistance Body Diode Forward Voltage Note RG VF(S-D) IF = 30 A, VGS = 0 V Reverse Recovery Time trr IF = 30 A, VGS = 0 V, Reverse Recovery Charge Note Pulsed Qrr di/dt = 100 A/μs MIN. TYP. MAX. UNIT 10 μA ±100 nA 1.5 2.0 2.5 V 13 19 S 5.1 6.0 mΩ 7.4 11 mΩ 2320 pF 380 pF 185 pF 15 ns 14 ns 49 ns 7 ns 36 nC 17 nC 7 nC 6 nC 2.6 Ω 0.86 1.5 V 30 ns 26 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω L VDD ID VDD IAS BVDSS VDS Starting Tch TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG PG. VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% RL VDD VGS VGS Wave Form 10% 0 VDS 90% VDS VDS Wave Form 0 td(on) VGS 90% 90% 10% 10% tr td(off) tf ton toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D18634EJ1V0DS 2SK4090 dT - Percentage of Rated Power - % TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C PT - Total Power Dissipation - W 40 35 30 25 20 15 10 5 0 0 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 25 50 75 100 125 TC - Case Temperature - °C 150 ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 1000 100 ID(pulse) ID(DC) 10 RDS(on) Limited (VGS = 10 V) 1 PW 1i msi = 1i00 μs Power Dissip at io n 1i 0 Limit ed mis Tc = 25°C Single pulse 0.1 0.1 1 10 VDS - Drain to Source Voltage - V 100 ID - Drain Current - A DRAIN CURRENT vs. CASE TEMPERATURE 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C 1000 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 125°C/Wi 100 rth(t) - Transient Thermal Resistance - °C/W 10 Rth(ch-C) = 3.47°C/Wi 1 0.1 100 μ 1m 10 m 100 m 1 10 PW - Pulse Width – s Data Sheet D18634EJ1V0DS Single pulsei 100 1000 3 2SK4090 ID - Drain Current - A VGS(off) – Gate to Source Cut-off Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 VGS = 10 V 200 150 100 4.5 V 50 0 0 Pulsed 12 VDS - Drain to Source Voltage - V 3 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.5 2 1.5 1 0.5 VDS = VGS ID = 250 μA 0 -75 -25 25 75 125 Tch - Channel Temperature - °C 175 DRAIN TO SOURCE ON.


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