Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4090
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES • Low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 11 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low gate to drain charge QGD = 6 nC TYP. (VDD = 15 V, ID = 30 A) • 4.5 V drive available • Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SK4090(1)-S27-AY Note 2SK4090-ZK-E1-AY Note 2SK4090-ZK-E2-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube 75 p/tube
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg IAS EAS
30 ±20 ±64 ±192 36 1.0 150 −55 to +150 35 122.5
V V A A W W °C °C A mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-251) (TO-252)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18634EJ1V0DS00 (1st edition) Date Published February 2007 NS CP(K) Printed in Japan
2007
2SK4090
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note
VGS(off) | yfs | RDS(on)1
VDS = VGS, ID = 250 μA VDS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A
RDS(on)2
VGS = 4.5 V, ID = 30 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 30 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time Fall Time
td(off) tf
RG = 3 Ω
Total Gate Charge
QG1 VDD = 15 V, VGS = 10 V, ID = 30 A
QG2 VDD = 15 V, VGS = 4.5 V, ID = 30 A
Gate to Source Charge
QGS VDD = 15 V, ID = 30 A
Gate to Drain Charge
QGD
Gate Resistance Body Diode Forward Voltage Note
RG VF(S-D)
IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr IF = 30 A, VGS = 0 V,
Reverse Recovery Charge Note Pulsed
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±100 nA
1.5 2.0 2.5
V
13 19
S
5.1 6.0 mΩ
7.4 11 mΩ
2320
pF
380 pF
185 pF
15 ns
14 ns
49 ns
7 ns
36 nC
17 nC
7 nC
6 nC
2.6 Ω
0.86 1.5
V
30 ns
26 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
ID VDD
IAS BVDSS VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG PG.
VGS 0
τ τ = 1 μs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
10% 0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90% 10% 10%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
2
Data Sheet D18634EJ1V0DS
2SK4090
dT - Percentage of Rated Power - %
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
100
80
60
40
20
0 0 25 50 75 100 125 150 TC - Case Temperature - °C
PT - Total Power Dissipation - W
40 35 30 25 20 15 10
5 0
0
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
25 50 75 100 125 TC - Case Temperature - °C
150
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA 1000
100
ID(pulse) ID(DC)
10
RDS(on) Limited (VGS = 10 V)
1
PW 1i msi = 1i00 μs
Power
Dissip at io n
1i 0 Limit ed
mis
Tc = 25°C Single pulse
0.1
0.1
1
10
VDS - Drain to Source Voltage - V
100
ID - Drain Current - A
DRAIN CURRENT vs. CASE TEMPERATURE 80 70 60 50 40 30 20 10
0 0 25 50 75 100 125 150 TC - Case Temperature - °C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/Wi 100
rth(t) - Transient Thermal Resistance - °C/W
10
Rth(ch-C) = 3.47°C/Wi 1
0.1 100 μ
1m
10 m
100 m
1
10
PW - Pulse Width – s
Data Sheet D18634EJ1V0DS
Single pulsei 100 1000
3
2SK4090
ID - Drain Current - A
VGS(off) – Gate to Source Cut-off Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250
VGS = 10 V 200
150 100 4.5 V
50
0 0
Pulsed
12 VDS - Drain to Source Voltage - V
3
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
2.5
2
1.5
1
0.5 VDS = VGS ID = 250 μA
0 -75 -25
25
75 125
Tch - Channel Temperature - °C
175
DRAIN TO SOURCE ON.