RJK0659DPA

RJK0659DPA 60V, 30A, 8.0mΩ max. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0345EJ0300 Rev.3.00 Apr 09, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 60 20 30 120 30 15 16.9 55 2.27 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0345EJ0300 Rev.3.00 Apr 09, 2013 Page 1 of 6 RJK0659DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 V Gate to source leak current IGSS — — 0.1 A VGS = 20 V, VDS = 0 V Zero gate voltage drain current IDSS — — 1 A VDS = 60 V, VGS = 0 V Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 6.5 8.0...