Document
Preliminary Data Sheet
NP60N04VUK
MOS FIELD EFFECT TRANSISTOR
R07DS0576EJ0100 Rev.1.00
Nov 24, 2011
Description
The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)
Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP60N04VUK-E1-AY *1 NP60N04VUK-E2-AY *1
Lead Plating Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-252 (MP-3ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2
Tstg IAR EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 0 V
Ratings 40 20 60
240 105 1.2 175 –55 to 175 28 78
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
1.43 °C/W 125 °C/W
R07DS0576EJ0100 Rev.1.00 Nov 24, 2011
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NP60N04VUK
Electrical Characteristics (TA = 25°C)
Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Note: *1 Pulsed test
Symbol IDSS IGSS VGS(th) | yfs |
RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
VF(S-D) trr Qrr
MIN. — — 2.0 22 — — — — — — — — — — — — — —
TYP. — — 3.0 44 3.20
2450 340 140 19
9 45 7 42 11 11 0.9 44 40
MAX. 1
100 4.0 — 3.85 3680 510 260 50 30 90 20 63 — — 1.5 — —
Unit A nA V S m pF pF pF ns ns ns ns nC nC nC V ns nC
Test Conditions VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 30 A VGS = 10 V, ID = 30 A VDS = 25 V VGS = 0 V f = 1 MHz
VDD = 20 V, ID = 30 A VGS = 10 V RG = 0
VDD = 32 V VGS = 10 V ID = 60 A
IF = 60 A, VGS = 0 V IF = 60 A, VGS = 0 V di/dt = 100 A/s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
BVDSS
ID VDD
IAS
VDS
Starting Tch TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG. RG
VGS 0
τ
τ = 1 μs Duty Cycle ≤ 1%
RL
VGS
VGS
Wave Form
10% 0
VDD
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90% 10% 10%
tr td(off)
tf
ton toff
R07DS0576EJ0100 Rev.1.00 Nov 24, 2011
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NP60N04VUK
dT - Percentage of Rated Power - %
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
100
80
60
40
20
0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C
PT - Total Power Disslpation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120
100
80
60
40
20
0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
ID(Pulse) = 240 A
RDS(ON) Limited (VGS=10 V)
ID(DC) = 60 A
Power Dissipation Limited
10
PW = 100 μs
ID - Drain Current - A
PW = 1 ms
= 10 ms DC PW
Secondary Breakdown Limited
1
TC = 25°C Single Pulse
0.1 0.1
1
10 100
VDS - Drain to Source Voltage - V
1000 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
Rth(t) - Transient Thermal Resistance - °C/W
10
Rth(ch-C) = 1.43°C/W
1
0.1
0.01 0.1 m 1 m 10 m 100 m
1
10
PW - Pulse Width - s
Single pulse
100 1000
R07DS0576EJ0100 Rev.1.00 Nov 24, 2011
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ID - Drain Current - A
NP60N04VUK
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 300
250
200
150
100
50 VGS = 10 V Pulsed
0 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4
VGS(th) - Gate to Source Threshold Voltage - V
3
2
RDS(on) - Drain to Source On-State Resistance - mΩ
1 0 –100 –50 0
VDS = VGS ID = 250 μA
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
8 7 6 5 4 3 2 1 VGS = 10 V
Pulsed 0
1 10 100 1000
ID - Drain Current - A
RDS(on) - Drain to Source On-State Resistance - mΩ
|yfs| - Forward Transfer Admittance - S
ID - Drain Curent - A
FORWARD TRANSFER CHARACTERISTICS 100
10 TA = –55°C
25°C
85°C
150°C
1 175°C
0.1
0.01 0.001
0
VDS = 10 V Pulsed
123456
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
TA = –55°C 25°C 85°C
150°C 175°C
10
VDS = 5 V Pulsed
1 0.1 1
10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO.