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NP60N04VUK Dataheets PDF



Part Number NP60N04VUK
Manufacturers Renesas
Logo Renesas
Description N-Channel MOSFET
Datasheet NP60N04VUK DatasheetNP60N04VUK Datasheet (PDF)

Preliminary Data Sheet NP60N04VUK MOS FIELD EFFECT TRANSISTOR R07DS0576EJ0100 Rev.1.00 Nov 24, 2011 Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP60N04VUK-E1-AY *1 NP60N04VUK-E2-AY *1 Lead Plating.

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Preliminary Data Sheet NP60N04VUK MOS FIELD EFFECT TRANSISTOR R07DS0576EJ0100 Rev.1.00 Nov 24, 2011 Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP60N04VUK-E1-AY *1 NP60N04VUK-E2-AY *1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-252 (MP-3ZP) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2 Tstg IAR EAR Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V Ratings 40 20 60 240 105 1.2 175 –55 to 175 28 78 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.43 °C/W 125 °C/W R07DS0576EJ0100 Rev.1.00 Nov 24, 2011 Page 1 of 6 NP60N04VUK Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Note: *1 Pulsed test Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. — — 2.0 22 — — — — — — — — — — — — — — TYP. — — 3.0 44 3.20 2450 340 140 19 9 45 7 42 11 11 0.9 44 40 MAX. 1 100 4.0 — 3.85 3680 510 260 50 30 90 20 63 — — 1.5 — — Unit A nA V S m pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 30 A VGS = 10 V, ID = 30 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 30 A VGS = 10 V RG = 0  VDD = 32 V VGS = 10 V ID = 60 A IF = 60 A, VGS = 0 V IF = 60 A, VGS = 0 V di/dt = 100 A/s TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω L VDD BVDSS ID VDD IAS VDS Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. PG. RG VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% RL VGS VGS Wave Form 10% 0 VDD VDS 90% VDS VDS Wave Form 0 td(on) VGS 90% 90% 10% 10% tr td(off) tf ton toff R07DS0576EJ0100 Rev.1.00 Nov 24, 2011 Page 2 of 6 NP60N04VUK dT - Percentage of Rated Power - % Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C PT - Total Power Disslpation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 100 ID(Pulse) = 240 A RDS(ON) Limited (VGS=10 V) ID(DC) = 60 A Power Dissipation Limited 10 PW = 100 μs ID - Drain Current - A PW = 1 ms = 10 ms DC PW Secondary Breakdown Limited 1 TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V 1000 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 125°C/W Rth(t) - Transient Thermal Resistance - °C/W 10 Rth(ch-C) = 1.43°C/W 1 0.1 0.01 0.1 m 1 m 10 m 100 m 1 10 PW - Pulse Width - s Single pulse 100 1000 R07DS0576EJ0100 Rev.1.00 Nov 24, 2011 Page 3 of 6 ID - Drain Current - A NP60N04VUK DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 300 250 200 150 100 50 VGS = 10 V Pulsed 0 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4 VGS(th) - Gate to Source Threshold Voltage - V 3 2 RDS(on) - Drain to Source On-State Resistance - mΩ 1 0 –100 –50 0 VDS = VGS ID = 250 μA 50 100 150 200 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8 7 6 5 4 3 2 1 VGS = 10 V Pulsed 0 1 10 100 1000 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - mΩ |yfs| - Forward Transfer Admittance - S ID - Drain Curent - A FORWARD TRANSFER CHARACTERISTICS 100 10 TA = –55°C 25°C 85°C 150°C 1 175°C 0.1 0.01 0.001 0 VDS = 10 V Pulsed 123456 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 TA = –55°C 25°C 85°C 150°C 175°C 10 VDS = 5 V Pulsed 1 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO.


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