AUIRLR2905

AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified G Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. HEXFET® Power MOSFET D V(BR)DSS 55V RDS(on) max. 27m S ID 42A D S G D-Pak AUIRLRU2905 S D I-Pak G AUIRLU2905 G Gate D Drain S Source Base part number Package Type Standard Pack Complete Part Number AUIRLR2905 AUIRLU2905 Dpak Ipak Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Tube Quantity 75 2000 3000 3000 75 AUIRLR2905 AUIRLR2905TR AUIRLR2905TRL AUIRLR2905TRR AUIRLU2905 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maxi...