STW5NB100
®
TYPE STW5NB100
VDSS 1000 V
STW5NB100
N - CHANNEL 1000V - 4Ω - 4.3A - TO-247 PowerMESH™ MOSFET
RDS(on) < 4.4 Ω
ID ...
Description
®
TYPE STW5NB100
VDSS 1000 V
STW5NB100
N - CHANNEL 1000V - 4Ω - 4.3A - TO-247 PowerMESH™ MOSFET
RDS(on) < 4.4 Ω
ID 4.3 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 4 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
3 2 1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR VGS ID ID
Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC
IDM() Ptot
Drain Current (pulsed) Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
June 1998
Value
Unit
1000
V
1000
V
± 30
V
4.3 A
2.7 A
17...
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