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RJK0226DNS Dataheets PDF



Part Number RJK0226DNS
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel Power MOS FET
Datasheet RJK0226DNS DatasheetRJK0226DNS Datasheet (PDF)

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V)  Pb-free  Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain.

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Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V)  Pb-free  Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 25 ±12 40 160 40 14.7 27 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Page 1 of 6 RJK0226DNS Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 25 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 2.3 2.7 115 4300 565 340 2.6 31 11 8 18.6 8.7 65 13 0.39 28 Max — ±0.1 1 2.5 2.8 3.4 — 6020 — — 4.5 — — — — — — — — — Preliminary Unit V A mA V m m S pF pF pF  nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 25 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 20 A, VGS = 8 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 40 A VGS = 8 V, ID = 20 A VDD  10 V RL = 0.5  Rg = 4.7  IF = 2 A, VGS = 0 Note4 IF =40 A, VGS = 0 diF/ dt = 100 A/ s R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Page 2 of 6 Channel Dissipation Pch (W) RJK0226DNS Main Characteristics Power vs. Temperature Derating 40 30 20 10 0 50 100 150 200 Case Temperature Tc (°C) Drain Current ID (A) Typical Output Characteristics 50 4.5 V 8V 40 Pulse Test 2.8 V 30 20 10 VGS = 2.4 V 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 Pulse Test 150 100 50 ID = 20 A 10 A 5A 0 3 6 9 12 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS(on) (mV) R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Static Drain to Source On State Resistance RDS(on) (mΩ) Drain Current ID (A) Drain Current ID (A) Preliminary Maximum Safe Operation Area 1000 100 10 μs 100 μs 1 ms 10 PW = 10 ms Operation in 1 this area is limited by RDS(on) Tc = 25 °C 0.1 1 shot Pulse 0.1 1 10 DC Operation 100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 50 VDS = 5 V Pulse Test 40 30 20 10 Tc = 75°C 25°C –25°C 0 12 34 5 Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 100 Pulse Test 30 10 3 VGS = 4.5 V 8V 1 1 3 10 30 100 300 1000 Drain Current ID (A) Page 3 of 6 RJK0226DNS Static Drain to Source On State Resistance vs. Temperature 5 Pulse Test 4 ID = 5 A, 10 A, 20 A 3 VGS = 4.5 V 2 8V 1 5 A, 10 A, 20 A 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 ID = 40 A 20 40 16 30 VDS 20 VDD = 20 V 10 V VGS 12 8 10 VDD = 20 V 4 10 V 00 0 20 40 60 80 100 Gate Charge Qg (nc) Maximum Avalanche Energy vs. Channel Temperature Derating 50 40 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Repetitive Avalanche Energy EAR (mJ) Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A) Capacitance C (pF) Preliminary 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 300 100 Ciss Coss Crss 30 VGS = 0 10 f = 1 MHz 0 10 20 25 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 50 10 V 5V 40 Pulse Test 30 20 10 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Page 4 of 6 RJK0226DNS 3 Normalized Transient Thermal Impedance vs. Pulse Width Preliminary Normalized Transient Thermal Impedance γs (t) Vin 10 V 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 00.0.0211shot pulse 0.01 10 μ 100 μ θch − c(t) = γs (t) • θch − c θch − c = 4.17°C/W, Tc = 25°C PDM D= PW T PW T 1m 10 m 100 m Pulse Width PW (S) 1 10 Avalanche Test Circuit VDS Monitor Rg 50 Ω L IAP .


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