Document
Preliminary Datasheet
RJK0226DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0260EJ0110
Rev.1.10
Mar 03, 2011
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free
Outline
Package name: 8pin HVSON(3333) 5 6 78 4 321
4 G
5 678 D DDD
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3
Tch
Tstg
Ratings 25 ±12 40 160 40 14.7 27 30 4.17 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
R07DS0260EJ0110 Rev.1.10 Mar 03, 2011
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RJK0226DNS
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test
Symbol V(BR)DSS
IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on)
tr td(off)
tf VDF trr
Min 25 — — 1.2 — — — — — — — — — — — — — — — —
Typ — — — — 2.3 2.7 115 4300 565 340 2.6 31 11 8 18.6 8.7 65 13 0.39 28
Max — ±0.1 1 2.5 2.8 3.4 — 6020 — — 4.5 — — — — — — — — —
Preliminary
Unit V A mA V m m S pF pF pF nC nC nC ns ns ns ns V ns
(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 25 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 20 A, VGS = 8 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz
VDD = 10 V VGS = 4.5 V ID = 40 A
VGS = 8 V, ID = 20 A VDD 10 V RL = 0.5 Rg = 4.7
IF = 2 A, VGS = 0 Note4 IF =40 A, VGS = 0 diF/ dt = 100 A/ s
R07DS0260EJ0110 Rev.1.10 Mar 03, 2011
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Channel Dissipation Pch (W)
RJK0226DNS
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
Drain Current ID (A)
Typical Output Characteristics
50 4.5 V
8V 40
Pulse Test 2.8 V
30
20 10 VGS = 2.4 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
200 Pulse Test
150
100
50 ID = 20 A 10 A 5A
0 3 6 9 12
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS(on) (mV)
R07DS0260EJ0110 Rev.1.10 Mar 03, 2011
Static Drain to Source On State Resistance RDS(on) (mΩ)
Drain Current ID (A)
Drain Current ID (A)
Preliminary
Maximum Safe Operation Area
1000
100 10 μs
100
μs 1 ms
10 PW = 10 ms
Operation in 1 this area is
limited by RDS(on) Tc = 25 °C 0.1 1 shot Pulse 0.1 1
10
DC Operation
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50 VDS = 5 V Pulse Test
40
30
20
10 Tc = 75°C
25°C –25°C
0
12
34
5
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance vs. Drain Current
100 Pulse Test
30
10
3 VGS = 4.5 V 8V
1 1 3 10 30 100 300 1000
Drain Current ID (A)
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RJK0226DNS
Static Drain to Source On State Resistance vs. Temperature
5 Pulse Test
4
ID = 5 A, 10 A, 20 A
3 VGS = 4.5 V 2 8V 1
5 A, 10 A, 20 A
0 –25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
50 ID = 40 A
20
40 16
30
VDS 20
VDD = 20 V 10 V
VGS 12
8
10
VDD = 20 V
4
10 V
00 0 20 40 60 80 100
Gate Charge Qg (nc)
Maximum Avalanche Energy vs. Channel Temperature Derating
50
40
30
20
10
0 25 50 75 100 125 150
Channel Temperature Tch (°C)
Repetitive Avalanche Energy EAR (mJ)
Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A)
Capacitance C (pF)
Preliminary
10000
Typical Capacitance vs. Drain to Source Voltage
3000 1000
300 100
Ciss
Coss Crss
30 VGS = 0
10 f = 1 MHz 0
10
20 25
Drain to Source Voltage VDS (V)
Reverse Drain Current vs. Source to Drain Voltage
50 10 V
5V 40
Pulse Test
30
20 10 VGS = 0, –5 V
0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V)
R07DS0260EJ0110 Rev.1.10 Mar 03, 2011
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RJK0226DNS
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Normalized Transient Thermal Impedance γs (t)
Vin 10 V
1 D=1
0.5 0.3
0.2
0.1 0.1 0.05
0.03 00.0.0211shot pulse 0.01
10 μ 100 μ
θch − c(t) = γs (t) • θch − c θch − c = 4.17°C/W, Tc = 25°C
PDM
D=
PW T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Avalanche Test Circuit
VDS Monitor
Rg
50 Ω
L
IAP .