Document
RJK03N5DPA
30V, 45A, 2.9mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free
Outline
Preliminary Datasheet
R07DS0786EJ0200 Rev.2.00
Feb 12, 2013
RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))
5678
5 678 D DDD
4321
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3
Tch
Tstg
Ratings 30 ±20 45 180 45 16 25.6 40 3.13 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
R07DS0786EJ0200 Rev.2.00 Feb 12, 2013
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RJK03N5DPA
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test
Symbol V(BR)DSS
IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on)
tr td(off)
tf VDF trr
Min 30 — — 1.2 — — — — — — — — — — — — — — — —
Typ — — — — 2.4 3.0 100 2870 485 300 1.5 23 7.9 7.5 5.8 3.4 49.9 16.8 0.41 8.7
Max — ± 0.5 1 2.5 2.9 3.9 — 4020 — — 3.0 — — — — — — — — —
Preliminary
Unit V A mA V m m S pF pF pF
nC nC nC ns ns ns ns V ns
(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 24 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 22.5A, VGS = 10 V Note4 ID = 22.5A, VGS = 4.5 V Note4 ID = 22.5A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz
VDD = 10 V VGS = 4.5 V ID = 45 A
VGS = 10 V, ID = 22.5A VDD 10 V RL = 0.44 Rg = 4.7
IF = 2 A, VGS = 0 Note4 IF =45 A, VGS = 0 diF/ dt = 500 A/ s
R07DS0786EJ0200 Rev.2.00 Feb 12, 2013
Page 2 of 6
Channel Dissipation Pch (W)
RJK03N5DPA
Main Characteristics
Power vs. Temperature Derating 80
60
40
20
Drain Current ID (A)
0 50 100 150 200 Case Temperature Tc ( °C)
Typical Output Characteristics
50 4.5 V
10 V 40
Pulse Test
2.7 V
2.6 V
30
20 2.5 V
10 VGS = 2.4 V
0 2 4 6 8 10 Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
120 Pulse Test
90
60 ID = 20 A
30 10 A 5A
0 4 8 12 16 20 Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS(on) (mV)
R07DS0786EJ0200 Rev.2.00 Feb 12, 2013
Static Drain to Source On State Resistance RDS(on) (mΩ)
Drain Current ID (A)
Drain Current ID (A)
Preliminary
Maximum Safe Operation Area 1000
100 PW = 10 ms
1
100 ms
10 μs
μs
10 DC
1
Operation in this area is
Operation
limited by RDS(on)
Tc = 25 °C
1 shot Pulse
0.1
0.1 1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50 VDS = 5 V Pulse Test
40
30
20
10 Tc = 75°C
25°C –25°C
0
12
34
5
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance vs. Drain Current
100 Pulse Test
30
10
3 VGS = 4.5 V 10 V
1 1 3 10 30 100 300 1000 Drain Current ID (A)
Page 3 of 6
RJK03N5DPA
Static Drain to Source On State Resistance RDS(on) (mΩ)
Static Drain to Source On State Resistance vs. Temperature
10 Pulse Test
8
6 ID = 5 A, 10A, 20 A
4 VGS = 4.5 V
2 10 V
5 A, 10 A, 20A
0 –25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
50 ID = 45 A
20
40 VDD = 25 V 10 V
30 VDS
16
VGS
12
20 8
10
VDD = 25 V
4
10 V
00 0 20 40 60 80 100
Gate Charge Qg (nc)
Maximum Avalanche Energy vs. Channel Temperature Derating
50
40
30
20
10
0 25 50 75 100 125 150 Channel Temperature Tch (°C)
Avalanche Energy EAS (mJ)
Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A)
Capacitance C (pF)
Preliminary
10000
Typical Capacitance vs. Drain to Source Voltage
3000 1000
300 100
Ciss Coss Crss
30 VGS = 0 f = 1 MHz
10 0 10 20 30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs. Source to Drain Voltage
50 10 V
5V 40
Pulse Test
30
20 10 VGS = 0, –5 V
0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V)
R07DS0786EJ0200 Rev.2.00 Feb 12, 2013
Page 4 of 6
RJK03N5DPA
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Vin 15 V
1 D=1
0.5 0.3
0.2
0.1 0.1
0.05
0.03
0.02 0.011shot
pulse
0.01
PDM
D = PW T
PW T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Avalanche Test Circuit
VDS Monitor
Rg
L
IAP Monitor
D. U. T
VDD
Avalanche W.