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RJK03N5DPA Dataheets PDF



Part Number RJK03N5DPA
Manufacturers Renesas Technology
Logo Renesas Technology
Description Built in SBD N Channel Power MOS FET
Datasheet RJK03N5DPA DatasheetRJK03N5DPA Datasheet (PDF)

RJK03N5DPA 30V, 45A, 2.9mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS0786EJ0200 Rev.2.00 Feb 12, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 5 678 D DDD 4321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to sour.

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RJK03N5DPA 30V, 45A, 2.9mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS0786EJ0200 Rev.2.00 Feb 12, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 5 678 D DDD 4321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 45 180 45 16 25.6 40 3.13 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0786EJ0200 Rev.2.00 Feb 12, 2013 Page 1 of 6 RJK03N5DPA Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 2.4 3.0 100 2870 485 300 1.5 23 7.9 7.5 5.8 3.4 49.9 16.8 0.41 8.7 Max — ± 0.5 1 2.5 2.9 3.9 — 4020 — — 3.0 — — — — — — — — — Preliminary Unit V A mA V m m S pF pF pF  nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 24 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 22.5A, VGS = 10 V Note4 ID = 22.5A, VGS = 4.5 V Note4 ID = 22.5A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 45 A VGS = 10 V, ID = 22.5A VDD  10 V RL = 0.44 Rg = 4.7  IF = 2 A, VGS = 0 Note4 IF =45 A, VGS = 0 diF/ dt = 500 A/ s R07DS0786EJ0200 Rev.2.00 Feb 12, 2013 Page 2 of 6 Channel Dissipation Pch (W) RJK03N5DPA Main Characteristics Power vs. Temperature Derating 80 60 40 20 Drain Current ID (A) 0 50 100 150 200 Case Temperature Tc ( °C) Typical Output Characteristics 50 4.5 V 10 V 40 Pulse Test 2.7 V 2.6 V 30 20 2.5 V 10 VGS = 2.4 V 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 120 Pulse Test 90 60 ID = 20 A 30 10 A 5A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS(on) (mV) R07DS0786EJ0200 Rev.2.00 Feb 12, 2013 Static Drain to Source On State Resistance RDS(on) (mΩ) Drain Current ID (A) Drain Current ID (A) Preliminary Maximum Safe Operation Area 1000 100 PW = 10 ms 1 100 ms 10 μs μs 10 DC 1 Operation in this area is Operation limited by RDS(on) Tc = 25 °C 1 shot Pulse 0.1 0.1 1 10 100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 50 VDS = 5 V Pulse Test 40 30 20 10 Tc = 75°C 25°C –25°C 0 12 34 5 Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 100 Pulse Test 30 10 3 VGS = 4.5 V 10 V 1 1 3 10 30 100 300 1000 Drain Current ID (A) Page 3 of 6 RJK03N5DPA Static Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source On State Resistance vs. Temperature 10 Pulse Test 8 6 ID = 5 A, 10A, 20 A 4 VGS = 4.5 V 2 10 V 5 A, 10 A, 20A 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 ID = 45 A 20 40 VDD = 25 V 10 V 30 VDS 16 VGS 12 20 8 10 VDD = 25 V 4 10 V 00 0 20 40 60 80 100 Gate Charge Qg (nc) Maximum Avalanche Energy vs. Channel Temperature Derating 50 40 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Energy EAS (mJ) Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A) Capacitance C (pF) Preliminary 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 300 100 Ciss Coss Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 50 10 V 5V 40 Pulse Test 30 20 10 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0786EJ0200 Rev.2.00 Feb 12, 2013 Page 4 of 6 RJK03N5DPA 3 Normalized Transient Thermal Impedance vs. Pulse Width Preliminary Vin 15 V 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 0.011shot pulse 0.01 PDM D = PW T PW T 1m 10 m 100 m Pulse Width PW (s) 1 10 Avalanche Test Circuit VDS Monitor Rg L IAP Monitor D. U. T VDD Avalanche W.


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