Silicon N Channel MOS FET
RJK4006DPD
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • Hi...
Description
RJK4006DPD
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A)
4
2, 4
12 3
1
3
REJ03G1547-0100 Rev.1.00
Dec 19, 2008
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
Ratings 400 ±30 8 24 8 24 8 3.7 65 1.92 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A A mJ W
°C/W °C °C
REJ03G1547-0100 Rev.1.00 Dec 19, 2008 Page 1 of 6
RJK4006DPD
Electrical Characteristics
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse reco...
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