MOSFET
BUK9Y3R5-40E
N-channel 40 V, 3.8 mΩ logic level MOSFET in LFPAK56
11 November 2014
Product data sheet
1. General des...
Description
BUK9Y3R5-40E
N-channel 40 V, 3.8 mΩ logic level MOSFET in LFPAK56
11 November 2014
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 32 V;
Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit - - 40 V - - 100 A - - 167 W
- 2.9 3.8 mΩ
- 8.6 - nC
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NXP Semiconductors
BUK9Y3R5-40E
N-channel 40 V, 3.8 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information P...
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