FRFET MOSFET. FDPF18N20FT Datasheet

FDPF18N20FT Datasheet PDF, Equivalent


Part Number

FDPF18N20FT

Description

N-Channel UniFETTM FRFET MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDPF18N20FT Datasheet PDF


FDPF18N20FT Datasheet
FDP18N20F / FDPF18N20FT
N-Channel UniFETTM FRFET® MOSFET
200 V, 18 A, 140 mΩ
November 2013
Features
• RDS(on) = 120 mΩ (Typ.) @ VGS = 10 V, ID = 9 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 24 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET® MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
GDS
TO-220
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
S
FDP18N20F FDPF18N20FT
200
±30
18 18*
10.8 10.8*
72 72*
324
18
10
4.5
100 41
0.83 0.33
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP18N20F
1.2
62.5
FDPF18N20FT
3.0
62.5
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDP18N20F / FDPF18N20FT Rev. C1
1
www.fairchildsemi.com

FDPF18N20FT Datasheet
Package Marking and Ordering Information
Part Number
FDP18N20F
FDPF18N20FT
Top Mark
FDP18N20F
FDPF18N20FT
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 9 A
VDS = 20 V, ID = 9 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 160 V, ID = 18 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 100 V, ID = 18 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 18 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 18 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 2 mH, IAS = 18 A, VDD = 50 V, RG = 2 5Ω, starting TJ = 25°C.
3. ISD 18 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
200
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.2
-
-
-
-
0.12
13.6
885
200
24
20
5
9
16
50
50
40
-
-
-
80
240
Max. Unit
-
-
10
100
±100
V
V/oC
μA
nA
5.0 V
0.14 Ω
-S
1180
270
35
26
-
-
pF
pF
pF
nC
nC
nC
40 ns
110 ns
110 ns
90 ns
18 A
72 A
1.5 V
- ns
- nC
©2009 Fairchild Semiconductor Corporation
FDP18N20F / FDPF18N20FT Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDP18N20F / FDPF18N20FT — N-Channel Un iFETTM FRFET® MOSFET FDP18N20F / FDPF 18N20FT N-Channel UniFETTM FRFET® MOSF ET 200 V, 18 A, 140 mΩ November 2013 Features • RDS(on) = 120 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Cha rge (Typ. 20 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED TV Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOS FET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resista nce, and to provide better switching pe rformance and higher avalanche energy s trength. The body diode’s reverse rec overy performance of UniFET FRFET® MOS FET has been enhanced by lifetime contr ol. Its trr is less than 100nsec and th e reverse dv/dt immunity is 15V/ns whil e normal planar MOSFETs have over 200ns ec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve syste.
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