Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
Symbol
VCC VIN IC PD Tj Tstg
Limits
50 −5 to +10
500 200 150 −55 to +150
Unit
V V mA mW °C °C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD113ZET1G
E8
1
10 3000/Tape & Reel
LDTD113ZET1G
E8
1
10 10000/Tape & Reel
LDTD113ZET1G
3 1
2
SC-89
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI(off)
−
− 0.3
VCC=5V, IO=100µA
V
VI(on)
1.5
−
−
VO=0.3V, IO=20mA
Output voltage
VO(on) − 0.1 0.3 V IO/II=50mA/2.5mA
Input current
II − − 7.2 mA VI=5V
Output current
IO(off)
−
− 0.5 µA VCC=50V, VI=0V
DC current gain
GI 82 − − − VO=5V, IO=50mA
Input resistance
R1 0.7 1 1.3 kΩ
−
Resistance ratio
R2/R1
8
10 12
−
−
Transition frequency
fT ∗ − 200 − MHz VCE=10V, IE=−50mA, f=100MHz
∗ Characteristics of built-in transistor
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LESHAN RADIO COMPANY, LTD. LDTD113ZET1G
zElectrical characteristic curves
INPUT VOLTAGE : VI (on) (V)
100
VO=0.3V
50
20 10
5
2 1 500m
Ta=−40°C 25°C
100°C
200m 100m
500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
OUTPUT CURRENT : Io (A)
10m 5m
2m 1m 50µ
200µ 100µ
50µ
20µ 10µ
5µ 2µ 1µ
0
VCC=5V
Ta=100°C 25°C
−40°C
0.5 1.0 1.5 2.0 2.5 INPUT VOLTAGE : VI (off) (V)
3.0
Fig.2 Output current vs. input voltage (OFF characteristics)
DC CURRENT GAIN : GI
1k
500
Ta=100°C
200
25°C −40°C
100
50
VO=5V
20 10
5
2 1 500µ1m 2m 5m 10m 20m 50m 100m200m 500m
OUTPUT CURRENT : IO (A)
Fig. 3 DC current gain vs. output current
OUTPUT VOLTAGE : VO (on) (V)
1 500m
200m 100m
50m
Ta=100°C 25°C
−40°C
lO/lI=20
20m 10m
5m
2m 1m 500µ 1m 2m 5m 10m 20m 50m100m200m 500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
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LESHAN RADIO COMPANY, LTD. LDTD113ZET1G
SC-89
NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
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