LDTB143TKT1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTB143TKT1G Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −40 −5 −500 200 150 −55 to +150 Unit V V V mA mW C C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB143TKT1G K2 4.7 3000/Tape & Reel LDTB143TKT3G K2 4.7 10000/Tape & Reel 3 1 2 SC-89 1 BASE R1 3 COLLECTOR 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −40 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50µA Col...