Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
∗ Each pin mounted on the recommended land
Symbol VCBO VCEO VEBO IC Pd ∗ Tj Tstg
Limits −50 −50 −5 −500 200 150 −55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
Unit V V V mA
mW C C
LDTB114GKT1G
K7
10 3000/Tape & Reel
LDTB114GKT3G
K7
10 10000/Tape & Reel
LDTB114GKT1G
3 1
2
SC-89
1 BASE R2
3 COLLECTOR
2 EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current
BVCEO BVEBO
ICBO
Emitter cutoff curren
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
hFE
Input resistance
R
Transition frequency
fT ∗
∗Characteristics of built-in transistor
Min. −50 −50 −5
− − − 56 7 −
Typ. − − − − − − − 10
200
Max. − − −
−0.5 −580 −0.3
− 13 −
Unit V V V µA µA V − kΩ
MHz
Conditions IC= −50µA IC= −1mA IE= −720µA VCB= −50V VEB= −4V IC/IB= −50mA/−2.5mA IC= −50mA , VCE= −5V
− VCE= −10V , IE=50mA , f=100MHz
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LESHAN RADIO COMPANY, LTD. LDTB114GKT1G
DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
zElectrical characteristic curves
1000
VCE=5V
500
200 100 50
20 10 5
Ta=25°C
Ta=100°C Ta= −40°C
2
1 −500µ −1m −2m −5m −10m −20m −50m−100m −200m −500m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current transfer ratio vs. Collector current
−1
IC/IB=20
−500m
−200m −100m −50m
−20m −10m −5m
Ta=100°C
Ta=25°C
Ta= −40°C
−2m
−1m −500µ −1m −2m
−5m −10m −20m −50m−100m −200m −500m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage vs. Collector current
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LESHAN RADIO COMPANY, LTD. LDTB114GKT1G
SC-89
NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
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