LDTB113ZET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTB113ZET1G Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IC PD Tj Tstg Limits −50 −10 to +5 −500 200 150 −55 to +150 Unit V V mA mW C C 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB113ZET1G K8 1 10 3000/Tape & Reel LDTB113ZET3G K8 1 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Input voltage VI(off) VI(on) − −3 Output voltage VO(on) − Input current II − Output current IO(off) − DC current gain GI 56 Input resistance R1 0.7 Resistance ratio R2/R1 8 Transition frequency fT ∗ Transition frequency of the device − Typ. − − − −...