NP55N03SUG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP55N03SUG-E1-AY Note NP55N03SUG-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZK) typ. 0.27 g FEATURES Channel temperature 175 degree rated Low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A) Low input capacitance Ciss = 3500 pF TYP. (VDS = 25 V) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±55 ±220 A A Total Power Dissipation (TC = 25°C) PT1 77 W Total Power Dissipation (TA = 25°C) PT2 1.2 W Channel Temperature Tch 175 °C Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg −55 to +175 °C IAR 33 A EAR 109 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH (TO-252) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.95 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the ...