FCD7N60

FCD7N60 — N-Channel SuperFET® MOSFET FCD7N60 N-Channel SuperFET® MOSFET 600 V, 7 A, 600 mΩ Features 650 V @ TJ = 150°C Typ. RDS(on) = 530 mΩ Ultra Low Gate Charge (Typ. Qg = 23 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF) 100% Avalanche Tested RoHS Compliant Application LCD / LED TV and Monitor Lighting Solar Inverter AC-DC Power Supply December 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G S D D-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Gate to Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temp...