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IRFR4510PbF Dataheets PDF



Part Number IRFR4510PbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFR4510PbF DatasheetIRFR4510PbF Datasheet (PDF)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97784 IRFR4510PbF IRFU4510PbF HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 11.1m max. 13.9m ID (Silicon Limited) 63A S ID (Package.

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97784 IRFR4510PbF IRFU4510PbF HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 11.1m max. 13.9m ID (Silicon Limited) 63A S ID (Package Limited) 56A D D S G DPak IRFR4510PbF S D G IPAK IRFU4510PbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) cContinuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy Thermal Resistance RJC RJA Symbol Parameter jJunction-to-Case iJunction-to-Ambient (PCB Mount) RJA Junction-to-Ambient ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through ˆ are on page 11 www.irf.com Max. 63 45 56 252 143 0.95 ± 20 -55 to + 175 300 127 See Fig. 14, 15, 22a, 22b Typ. ––– ––– ––– Max. 1.05 50 110 Units A W W/°C V °C mJ A mJ Units °C/W 1 05/02/12 IRFR/U4510PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG(int) Internal Gate Resistance Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter 100 ––– ––– 2.0 ––– ––– ––– ––– ––– Min. ––– 0.10 11.1 3.0 ––– ––– ––– ––– 0.61 Typ. ––– ––– 13.9 4.0 20 250 100 -100 ––– V V/°C m V μA nA  VGS = 0V, ID = 250μA ™Reference to 25°C, ID = 5mA fVGS = 10V, ID = 38A VDS = VGS, ID = 100μA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Max. Units Conditions gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) 62 ––– ––– ––– 54 81 ––– 14 ––– ––– 15 ––– ––– 39 ––– ––– 18 ––– ––– 42 ––– ––– 42 ––– ––– 34 ––– ––– 3031 ––– ––– 213 ––– ––– 104 ––– ––– 255 ––– ––– 478 ––– S VDS = 25V, ID = 38A ID = 38A fnC VDS = 50V VGS = 10V ID = 38A, VDS =0V, VGS = 10V VDD = 65V fns ID = 38A RG = 7.5 VGS = 10V VGS = 0V VDS = 50V pF ƒ = 1.0MHz hVGS = 0V, VDS = 0V to 80V gVGS = 0V, VDS = 0V to 80V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ISM VSD dv/dt trr Qrr IRRM ton Continuous Source Current (Body Diode) Pulsed Source Current Ù(Body Diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time ––– ––– 56 MOSFET symbol D ––– ––– 252 A showing the integral reverse G p-n junction diode. S f––– ––– 1.3 V TJ = 25°C, IS = 38A, VGS = 0V e––– 7.0 ––– V/ns TJ = 175°C, IS = 38A, VDS = 100V ––– ––– 34 39 ––– ––– ns TJ = 25°C TJ = 125°C ––– ––– 47 61 ––– ––– nC TJ = 25°C TJ = 125°C VR = 86V fIF = 38A di/dt = 100A/μs ––– 2.4 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com ID, Drain-to-Source Current (A) 1000 100 TOP BOTTOM VGS 15V 10V 6.0V 5.5V 5.0V 4.75V 4.5V 4.25V 10 1 60μs PULSE WIDTH Tj = 25°C 4.25V 0.1 0.1 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 100 TJ = 175°C TJ = 25°C 10 VDS = 25V 60μs PULSE WIDTH 1.0 23456789 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 100000 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd Ciss 1000 100 Coss Crss C, Capacitance (pF) 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com 1000 100 TOP BOTTOM VGS 15V 10V 6.0V 5.5V 5.0V 4.75V 4.5V 4.25V IRFR/U4510PbF ID, Drain-to-Source Current (A) 10 4.25V 1 0.1 60μs PULSE WIDTH Tj = 175°C 1 10 VDS, Drain-to-Source Voltage (V) 100 F.


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