Document
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
PD - 97784
IRFR4510PbF IRFU4510PbF
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
11.1m
max.
13.9m
ID (Silicon Limited)
63A
S ID (Package Limited)
56A
D D
S G
DPak IRFR4510PbF
S D G
IPAK IRFU4510PbF
G Gate
D Drain
S Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited)
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor
VGS TJ TSTG
Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy
Thermal Resistance
RJC RJA
Symbol
Parameter
jJunction-to-Case iJunction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 11 www.irf.com
Max. 63 45 56 252 143 0.95 ± 20
-55 to + 175
300
127 See Fig. 14, 15, 22a, 22b
Typ. ––– ––– –––
Max. 1.05 50 110
Units A
W W/°C
V °C
mJ A mJ Units °C/W
1
05/02/12
IRFR/U4510PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
RG(int)
Internal Gate Resistance
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
100 ––– ––– 2.0 ––– ––– ––– ––– –––
Min.
––– 0.10 11.1 3.0 ––– ––– ––– ––– 0.61
Typ.
––– ––– 13.9 4.0 20 250 100 -100 –––
V V/°C m
V μA
nA
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA fVGS = 10V, ID = 38A
VDS = VGS, ID = 100μA
VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V
Max. Units
Conditions
gfs
Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)
62 ––– –––
––– 54
81
––– 14 –––
––– 15 –––
––– 39 –––
––– 18 –––
––– 42 –––
––– 42 –––
––– 34 –––
––– 3031 –––
––– 213 –––
––– 104 –––
––– 255 –––
––– 478 –––
S VDS = 25V, ID = 38A
ID = 38A
fnC
VDS = 50V VGS = 10V
ID = 38A, VDS =0V, VGS = 10V
VDD = 65V
fns
ID = 38A RG = 7.5
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
hVGS = 0V, VDS = 0V to 80V gVGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
ISM
VSD dv/dt trr
Qrr
IRRM ton
Continuous Source Current (Body Diode) Pulsed Source Current
Ã(Body Diode)
Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current Forward Turn-On Time
––– ––– 56
MOSFET symbol
D
––– ––– 252
A
showing the integral reverse
G
p-n junction diode.
S
f––– ––– 1.3
V TJ = 25°C, IS = 38A, VGS = 0V
e––– 7.0 ––– V/ns TJ = 175°C, IS = 38A, VDS = 100V
––– –––
34 39
––– –––
ns
TJ = 25°C TJ = 125°C
––– –––
47 61
––– –––
nC
TJ = 25°C TJ = 125°C
VR = 86V
fIF = 38A
di/dt = 100A/μs
––– 2.4 –––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com
ID, Drain-to-Source Current (A)
1000 100
TOP BOTTOM
VGS 15V 10V 6.0V 5.5V 5.0V 4.75V 4.5V 4.25V
10
1 60μs PULSE WIDTH Tj = 25°C
4.25V
0.1 0.1
1 10 VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
ID, Drain-to-Source Current (A)
100 TJ = 175°C
TJ = 25°C 10
VDS = 25V 60μs PULSE WIDTH 1.0
23456789
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000 10000
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd
Ciss
1000 100
Coss Crss
C, Capacitance (pF)
10 1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
1000 100
TOP BOTTOM
VGS 15V 10V 6.0V 5.5V 5.0V 4.75V 4.5V 4.25V
IRFR/U4510PbF
ID, Drain-to-Source Current (A)
10 4.25V
1 0.1
60μs PULSE WIDTH Tj = 175°C
1 10 VDS, Drain-to-Source Voltage (V)
100
F.