IRFU4510PbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97784 IRFR4510PbF IRFU4510PbF HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 11.1m max. 13.9m ID (Silicon Limited) 63A S ID (Package Limited) 56A D D S G DPak IRFR4510PbF S D G IPAK IRFU4510PbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) cContinuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy Thermal Resistance RJC RJA Symbol Parameter jJunction-to-Case iJunction-to-Ambient (PCB Mount) RJA Junction-to-Ambient ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through ˆ are on page 11 www.irf.com ...