RJK0216DPA

Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0208EJ0110 Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D(2)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and Schottky Barrier Diode 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc=25C MOS1 25 ±20 15 60 15 5 3.1 10 150 –55 to +150 Ratings MOS2 25 ±20 32 128 32 10 12.5 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C R07DS0208EJ0110 Rev.1.10 Sep 05, 2011 Page 1 of 10 RJK0216DPA Electrical Characteristics MOS1 Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistan...