Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage Input voltage
Output current
Power dissipation Junction temperature Storage temperature
VCC VIN IO IC(Max.) Pd Tj Tstg
Limits
50 −10 to +40
30 100 200 150 −55 to +150
LDTC124EWT1G
3 1
2 SOT–323 (SC–70)
1 BASE
R1 R2
Unit
V V
mA
mW °C °C
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC124EWT1G
8B
22 22 3000/Tape & Reel
LDTC124EWT3G 8B
22 22 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Input voltage
VI(off) VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
fT ∗
∗ Characteristics of built-in transistor
Min. − 3 − − − 56
15.4 0.8 −
Typ. − − 0.1 − − − 22 1
250
Max. 0.5
− 0.3 0.36 0.5 − 28.6 1.2 −
Unit
V
V mA µA − kΩ − MHz
Conditions VCC=5V, IO=100µA VO=0.2V, IO=5mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA
− − VCE=10V, IE=−5mA, f=100MHz
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LESHAN RADIO COMPANY, LTD.
z Electrical characteristic curves
INPUT VOLTAGE : VI(on) (V)
100 VO=0.2V
50
20
10 Ta=−40°C
5 25°C 100°C
2
1
500m
200m 100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
1k
500
Ta=100°C 200 25°C 100 −40°C
50
VO=5V
20 10
5
2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
DC CURRENT GAIN : GI
OUTPUT VOLTAGE : VO(on) (V)
OUTPUT CURRENT : Io (A)
LDTC124EWT1G
10m 5m VCC=5V
2m
1m 500µ
Ta=100°C 25°C
−40°C
200µ
100µ
50µ
20µ 10µ 5µ
2µ 1µ
0 0.5 1.0 1.5 2.0 2.5 3.0
INPUT VOLTAGE : VI(off) (V)
Fig.2 Output current vs. input voltage (OFF characteristics)
1 lO/lI=20
500m
200m Ta=100°C
100m 25°C −40°C
50m
20m
10m
5m
2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
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LESHAN RADIO COMPANY, LTD. LDTC124EWT1G
SC−70 (SOT−323)
D e1
3
HE
1
E
2
b e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65 0.025
0.65 0.025
L
0.9 0.035
0.7 0.028
1.9 0.075
ǒ ǓSCALE 10:1
mm inches
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40 e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN 0.032 0.000
0.012 0.004 0.071 0.045 0.047
0.079
INCHES
NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083
MAX 0.040 0.004
0.016 0.010 0.087 0.053 0.055
0.095
GENERIC MARKING DIAGRAM
XXM
1
XX = Specific Device Code M = Date Code G = Pb−Free Package
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.
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