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LDTC124EWT1G Dataheets PDF



Part Number LDTC124EWT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LDTC124EWT1G DatasheetLDTC124EWT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimi.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature VCC VIN IO IC(Max.) Pd Tj Tstg Limits 50 −10 to +40 30 100 200 150 −55 to +150 LDTC124EWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 Unit V V mA mW °C °C 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC124EWT1G 8B 22 22 3000/Tape & Reel LDTC124EWT3G 8B 22 22 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Input voltage VI(off) VI(on) Output voltage VO(on) Input current II Output current IO(off) DC current gain GI Input resistance R1 Resistance ratio R2/R1 Transition frequency fT ∗ ∗ Characteristics of built-in transistor Min. − 3 − − − 56 15.4 0.8 − Typ. − − 0.1 − − − 22 1 250 Max. 0.5 − 0.3 0.36 0.5 − 28.6 1.2 − Unit V V mA µA − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.2V, IO=5mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA − − VCE=10V, IE=−5mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. z Electrical characteristic curves INPUT VOLTAGE : VI(on) (V) 100 VO=0.2V 50 20 10 Ta=−40°C 5 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1k 500 Ta=100°C 200 25°C 100 −40°C 50 VO=5V 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current DC CURRENT GAIN : GI OUTPUT VOLTAGE : VO(on) (V) OUTPUT CURRENT : Io (A) LDTC124EWT1G 10m 5m VCC=5V 2m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 lO/lI=20 500m 200m Ta=100°C 100m 25°C −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTC124EWT1G SC−70 (SOT−323) D e1 3 HE 1 E 2 b e 0.05 (0.002) A1 A A2 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 L 0.9 0.035 0.7 0.028 1.9 0.075 ǒ ǓSCALE 10:1 mm inches NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A2 0.7 REF b 0.30 0.35 0.40 c 0.10 0.18 0.25 D 1.80 2.10 2.20 E 1.15 1.24 1.35 e 1.20 1.30 1.40 e1 0.65 BSC L 0.425 REF c H E 2.00 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 GENERIC MARKING DIAGRAM XXM 1 XX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 3/3 .


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