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FS7UM-12

Mitsubishi Electric Semiconductor

Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS7UM-12 HIGH-SPEED SWITCHING USE FS7UM-12 OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4...


Mitsubishi Electric Semiconductor

FS7UM-12

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Description
MITSUBISHI Nch POWER MOSFET FS7UM-12 HIGH-SPEED SWITCHING USE FS7UM-12 OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 3.2 16 12.5MIN. 3.8MAX. 1.0 0.8 2.54 2.54 7.0 φ 3.6 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) ................................................................. 1.3Ω ¡ID ............................................................................................ 7A TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 600 ±30 7 21 125 –55 ~ +150 –55 ~ +150 2.0 4.5MAX. Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS7UM-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 ±30 ...




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