Document
NCV4299A
Voltage Regulator Low-Dropout
150 mA
The NCV4299A is a family of precision micropower voltage regulators with an output current capability of 150 mA. It is available in 5.0 V or 3.3 V output voltage.
The output voltage is accurate within "2% with a maximum dropout voltage of 0.5 V at 100 mA. Low Quiescent current is a feature drawing only 65 mA with a 100 mA load. This part is ideal for any and all battery operated microprocessor equipment.
The device features microprocessor interfaces including an adjustable reset output and adjustable system monitor to provide shutdown early warning. An inhibit function is available. With inhibit active, the regulator turns off and the device consumes less than 1.0 mA of quiescent current.
The part can withstand load dump transients making it suitable for use in automotive environments.
Features
• 5.0 V, 3.3 V ±2%, 150 mA • Extremely Low Current Consumption
♦ 65 mA (Typ) in the ON Mode ♦ t1.0 mA in the Off Mode
• Early Warning • Reset Output Low Down to VQ = 1.0 V • Adjustable Reset Threshold • Wide Temperature Range • Fault Protection
♦ 60 V Peak Transient Voltage ♦ −40 V Reverse Voltage ♦ Short Circuit ♦ Thermal Overload
• Internally Fused Leads • Inhibit Function with mA Current Consumption in the Off Mode • NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
• These are Pb−Free Devices
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14 1
14
SO−14 D SUFFIX CASE 751A
1
MARKING DIAGRAM
V4299AxxG AWLYWW
14 1
14
TSSOP−14 EP PA SUFFIX
CASE 948AW
V429 9Axx ALYWG
G
1
xx
= 33 (3.3 V Version)
= 50 (5.0 V Version)
A
= Assembly Location
WL, L = Wafer Lot
Y
= Year
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
1 RADJ
D GND GND GND
INH
RO
14 SI
I GND GND GND Q
SO
SOIC−14
1 RADJ
NC D
GND INH
NC RO
EPAD
14 SI I NC
Q NC
NC SO
TSSOP−14 EP
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 18 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
October, 2019 − Rev. 3
Publication Order Number: NCV4299A/D
NCV4299A
I
Bandgap Reference
-
+
INH
Current Limit and Saturation Sense
Q
RSO RRO
SI RADJ
SO
1.36 V + −
RO
8 mA
+ +
-
-
+
1.85 V
D Figure 1. Simplified Block Diagram
GND
PIN FUNCTION DESCRIPTION
Pin No. Pin No. SOIC−14 TSSOP−14 Symbol
Description
1
1
RADJ Reset Adjust. Use resistor divider to Q to adjust reset threshold lower. Connect to GND if not used.
2
3
D
Reset Delay. Connect external capacitor to ground to set delay time.
3
4
GND Ground
4
−
GND Ground
5
−
GND Ground
6
5
INH Inhibit. Connect to I if not needed. A high turns the regulator on. Use a low pass filter if transients
with slew rate in excess of 10 V/ms may be present on this pin during operation. See Figure 33 for
details.
7
7
RO Reset Output. NPN collector output with internal 20 kW pullup to Q. Notifies user of out of regulation
condition.
8
8
SO Sense Output. NPN collector output with internal 20 kW pullup to Q. Can be used to provide early
warning of an impending reset condition.
9
11
Q
5.0 V, 3.3 V, "2%, 150 mA output. Use 22 mF, ESR t 8.0 W to ground.
10
−
GND Ground
11
−
GND Ground
12
−
GND Ground
13
13
I
Input. Battery Supply Input Voltage.
14
14
SI
Sense Input. Can provide an early warning signal of an impending reset condition when used with
SO.
−
2,6,9,10,12 NC Not Connected
−
EPAD
EPAD Connect to Ground potential or leave unconnected.
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NCV4299A
MAXIMUM RATINGS
Rating
Symbol
Min
Max
Unit
Input Voltage to Regulator (DC) Input Peak Transient Voltage to Regulator wrt GND (Note 1)
VI
−40
45
V
−
−
60
V
Inhibit (INH)
VINH
−40
45
V
Sense Input (SI)
VSI
−40
45
V
Sense Input (SI)
ISI
−1.0
1.0
mA
Reset Threshold (RADJ)
VRADJ
−0.3
7.0
V
Reset Threshold (RADJ)
IRADJ
−10
10
mA
Reset Delay (D)
VD
−0.3
7.0
V
Reset Output (RO)
VRO
−0.3
7.0
V
Reset Output (RO)
IRO
−20
20
mA
Sense Output (SO)
VSO
−0.3
7.0
V
Output (Q)
VQ
−0.3
16
V
Output (Q)
IQ
−5.0
−
mA
ESD Capability, Human Body Model (Note 2)
ESDHB
2.0
−
kV
ESD Capability, Machine Model (Note 2)
ESDMM
200
−
V
ESD Capability, Charged Device Model (Note 2)
ESDCDM
1.0
−
kV
Junction Temperature
TJ
−
150
°C
Storage Temperature
Tstg
−50
150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Evaluated according to ISO7637−2 test conditions. Load dump pulse test passed up to VI = 60 V, guaranteed value up to VI = 45 V. 2. This device series incorporates ESD protection and is tested.